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Method for ashing

A technology of ashing and silicon substrates, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as price increases, complex electric structures and mechanical structures, and equipment cost increases

Inactive Publication Date: 2005-06-08
PSK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem with this procedure is that as the diameter of the silicon substrate increases, the cost of the equipment also increases, and more complex electrical and mechanical structures are necessary to maintain the operation of such equipment
As a result, the unit price associated with productivity rises

Method used

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  • Method for ashing
  • Method for ashing
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Examples

Experimental program
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Embodiment Construction

[0018] In order to better understand the present invention, preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0019] According to the present invention, the ashing method of semiconductor wafer is according to image 3 Proceed in the order shown.

[0020] In the in-situ bake step 300-1, the photoresist is removed based on the fact that when the silicon substrate is placed on a high-temperature hot tray in a high-pressure reaction chamber, the soft photoresist shrinks rapidly without producing thermal expansion. Specifically, the substrate is placed on a hot plate at a temperature of 200°C to 300°C under a pressure of 10 Torr or higher, and maintained for a predetermined time. Although the duration of this in-situ bake step can be properly set depending on the substrate conditions such as doping amount, the duration is preferably 5-20 seconds, in which case the substrate temperature rises sharply ,like i...

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PUM

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Abstract

The present invention provides an ashing method using rapid heat transfer at high pressure. The method of the present invention is applicable to all ashing processes of photoresist, which can quickly remove the hardened silicon substrate without popping during the ashing step by baking the high-dose ion-implanted silicon substrate on a hot tray. Photoresist, while allowing traditional equipment to continue to be used, increases the amount of ashing by greatly reducing the time of the ashing process. The method of the present invention comprises the following steps: an in-situ baking step, in which the silicon substrate is placed on a hot tray and baked for a predetermined time under a pressure of 10 torr or higher; a vacuumization step, in which the silicon substrate is A steady vacuum is achieved when the substrate is placed on a hot tray; a gas treatment step, in which a selected reaction gas is introduced into the reaction chamber; an ashing step, in which a plasma is generated until almost all lithography Glue is removed.

Description

technical field [0001] The present invention relates to ashing methods, in particular to ashing methods for semiconductor wafers. The method is characterized by high temperature baking of the semiconductor substrate on a hot tray and rapid removal of the hardened photoresist without popping during the ashing step, while enabling further application of conventional ashing equipment by Significantly reduces the time required for the wafer ashing process to increase ashing throughput. Background technique [0002] As one of the manufacturing processes of semiconductor devices, the photolithography process includes the following steps: spin-coating photoresist on the semiconductor substrate to form a photoresist layer; selectively exposing the photoresist layer; The glue layer is further formed into a photoresist pattern; etching or introducing impurities in the area of ​​the semiconductor substrate not covered by the photoresist; and an ashing process in which the photoresist ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/02H01L21/306H01L21/311
CPCH01L21/02063H01L21/02071H01L21/31138H01L21/306
Inventor 全钟砲宋龙勋朴辰右梁承馥
Owner PSK INC