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Amplifying solid camera shoot device

A solid-state imaging device and large-scale technology, which are applied in radiation control devices, image communication, television and other directions, can solve the problems of polluting the signal, maintaining the signal, and changing the polluted signal, and achieve the effect of suppressing signal pollution.

Inactive Publication Date: 2006-03-08
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] Therefore, there is a problem that during the holding period T of the FD part S If there is oblique incident light, part of the incident light reaches the charge detection unit 104, where the photoelectrically converted charge contaminates the signal held in the charge detection unit 104 (changes the held signal).
Moreover, there is also the following problem: the incident light reaching the lower side of the photoelectric conversion accumulation part 102 undergoes photoelectric conversion there, and the generated charges reach the charge detection part 104 due to diffusion, and the charge is stored in the charge detection part 104 during the holding period. within Ts, will contaminate the signal

Method used

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  • Amplifying solid camera shoot device
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  • Amplifying solid camera shoot device

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Embodiment Construction

[0056] Hereinafter, the amplification type solid-state imaging device of the present invention will be described in detail based on the illustrated embodiments.

[0057] figure 1 It is a circuit diagram showing a part of an amplifying solid-state imaging device according to an embodiment of the present invention.

[0058] This amplifying solid-state imaging device has a pixel unit 10 and a control unit 20 .

[0059] The above-mentioned pixel unit 10 has one pixel, one switched capacitor amplifier unit, and the selection unit 5 .

[0060] The above-mentioned pixel includes an embedded photodiode 1 as an example of a photoelectric conversion element, and a signal charge from the photodiode 1 is transferred to the detection unit FD, and has the following components: Figure 8 The transfer unit 2 is composed of transfer transistors having the structure shown in M1.

[0061] The above-mentioned switched capacitor amplifier section is composed of the following devices: an invert...

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Abstract

The amplifying solid-state image pickup device comprises a pixel section 10 and a control section 20. The control section 20 stores signal charges into the photodiode 1, and then writes the reset signal, by which the input of the inverting amplifier has been reset, into the first capacitance element 7 and the second capacitance element 9. The control section 20 writes the signal stored in the photodiode 1 into only the first capacitance element 7, and then outputs the signal, which has been stored in the photodiode 1 and written in the first capacitance element 7, to the signal line 11, and outputs the reset signal, which has been written in the second capacitance element 9, to the signal line 11.

Description

technical field [0001] The present invention relates to an amplifying solid-state imaging device having an amplifying circuit in a pixel portion. More specifically, the present invention relates to an amplified solid-state imaging device that includes a plurality of pixels having photoelectric conversion elements and transfer transistors that transmit signal charges from the photoelectric conversion elements, and amplifies the signals from the respective pixels and reads them out onto signal lines. device. Background technique [0002] Generally, an amplifying solid-state imaging device includes a pixel portion having an amplifying function and a scanning circuit arranged around the pixel portion, and an amplifying solid-state imaging device that reads out pixel data from the pixel portion via the scanning circuit is widespread. [0003] As an example of such an amplifying solid-state imaging device, an APS (Active Pixel Sensor) type sensor in which the pixel portion is com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H01L27/146H04N5/357H04N5/363H04N5/369H04N5/374H04N5/3745
CPCH04N5/363H04N25/65H04N25/76
Inventor 渡边恭志
Owner SHARP KK