Charge pump circuit

A charge pump, circuit technology, applied in the direction of conversion equipment without intermediate conversion to AC, can solve problems such as being unsuitable for low-voltage operation

Inactive Publication Date: 2006-04-19
深圳市科铭实业有限公司
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But unfortunately, as the input voltage decreases, Vφ decreases and Vd will limit the ou

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charge pump circuit
  • Charge pump circuit
  • Charge pump circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] These and other advantages of the present invention will become apparent upon reading the following detailed description of the aspects, including the description of the accompanying drawings. The present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] Figure 4 is a functional block diagram of a digitally controlled charge pump, which consists of a control logic and many separate analog blocks with different functions. The various modules can be divided according to their independent functions. VDD provides the reference voltage of the charge pump and is directly input to doubler 1. A doubler 1 , a tripler 2 , a hexafolder 3 , a doubler 4 and an output stage 5 are sequentially connected in parallel at the output end of the logic control circuit. The input terminal of the doubler is connected in parallel with the clock control signal CK1 and its inverted clock CK1B. Wherein the other input terminal of doubler 1 is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Through different voltage controller, the charge pump circuit selects required output voltage. Different switching capacitors are utilized to reach voltage needed for programmable LCD driving circuit. In the invention, different output voltages are outputted from single output node through few capacitors. Being applicable to IC chip in high voltage, the charge pump realizes low power waste and high efficiency. The structure of the circuit can be extended in order to obtain voltage needed based on requirement. Features are: modular construction, programmable value of output voltage reached through logic controlled clock time sequence, high voltage generated from few stages of level carry circuit and few capacitors.

Description

technical field [0001] The most common application of charge pump circuits is in the design of erasable programmable read-only memory circuits. So far, charge pump and voltage multiplication technology have been successfully applied in the design of low-voltage and low-power analog integrated circuits in LCD / TFT / OLED design. This invention is related to LCD circuits and in particular to LCD driver designs that provide multilayer voltage converters in a high voltage BICMOS process through programmable digital logic. Background technique [0002] As technology approaches to nanometers, analog circuit design must face the challenge of lowering voltage. Many LCD designs have to use high voltages internally to meet the LCD material requirements. Therefore, on-chip charge pumps and voltage multipliers become an integral part of low-voltage analog and digital circuit designs. Such as Figure 1 It is the driving circuit of TFT (Thin Film Transistor). In order to enable the TFT p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M3/07
Inventor 林丰成林昕
Owner 深圳市科铭实业有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products