31 results about "High voltage integrated circuits" patented technology

The invention discloses a high-voltage integrated circuit and electronic equipment, and relates to the technical field of power electronics, and the high-voltage integrated circuit comprises a logic control circuit, a level shift circuit and a high-side circuit. Wherein the output end of the logic control circuit is connected with the input end of the level shift circuit, the output end of the level shift circuit is connected with the input end of the high-side circuit, and the output end of the high-side circuit is connected into the high-side transistor. The logic control circuit is used for outputting a reset signal based on an accessed low-side input signal when it is detected that the pulse width of the accessed high-side input signal is smaller than the pulse width of a preset pulse signal. The level shift circuit is used for outputting a reset voltage signal to the high-side circuit according to an accessed reset signal. And the high-side circuit is used for controlling the high-side transistor to enter a cut-off state directly based on an accessed reset voltage signal under the condition that common-mode interlocking stops, so that the problem of control failure of the electronic equipment caused by the fact that the high-side transistor and the low-side transistor are in a conducting state together is avoided.

This invention relates to the field of intelligent power module technology, and particularly to a temperature protection circuit based on a hysteresis comparator and an intelligent power module incorporating the same. The circuit includes: a reference current source module connected to a temperature detection circuit, which is connected to the positive input terminal of the hysteresis comparator via a resistor R1; one end of resistor R1 and the positive input terminal of the hysteresis comparator are connected to one end of resistor Rf, and the other end of resistor Rf is connected to the positive output terminal of the hysteresis comparator; the reference current source module is connected to the negative input terminal of the hysteresis comparator via a resistor R; the temperature detection circuit detects the real-time temperature of the high-voltage integrated circuit and outputs a corresponding voltage signal. When the temperature exceeds or falls below a set threshold voltage, the hysteresis comparator internally controls the high-voltage integrated circuit to disconnect or connect to the power supply. This invention effectively improves the anti-interference capability of the temperature protection circuit, protects the integrated intelligent power module from damage due to high temperatures, and thus improves the reliability and market competitiveness of the intelligent power module.

A semiconductor device comprising a semiconductor substrate having a first cut side and an opposite second cut side, a circuit formed in or over the semiconductor substrate between the first and second cut sides, and a first scribelane portion between the circuit and the first cut side and a second scribelane portion between the circuit and the second cut side, the first scribelane portion including conductive scribelane structures, and the second scribelane portion being devoid of conductive scribelane structures.

The application relates to a high-voltage integrated circuit, a semiconductor circuit and a preparation method thereof. When the output voltage of a first low-voltage side power port meets a preset threshold range and a basic circuit of an HVIC is in a non-protection state, a pre-charge control circuit transmits a pre-charge signal to a bootstrap circuit, so that the basic circuit of the HVIC enters a pre-charge state; and when the basic circuit of the HVIC is in the pre-charge state, the pre-charge control circuit transmits a stop enabling signal to the basic circuit of the HVIC, so that the basic circuit of the HVIC stops outputting a driving signal; and then the bootstrap circuit can control the first low-voltage side power port to charge a first high-voltage side floating power port according to the acquired pre-charge signal, so as to realize pre-charge of the basic circuit of the HVIC. The integrated HVIC does not need an additional bootstrap circuit, the product application cost is reduced, the pre-charge time does not need to be designed in the MCU program design; the integrated HVIC can better guarantee the bootstrap capacitor voltage under the condition of power-off and power-on, and the product reliability is improved.

The present invention relates to a high-voltage integrated circuit and a semiconductor circuit. The high-voltage integrated circuit includes an overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit; the overcurrent protection circuit includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal, the overcurrent protection signal output terminal is connected to the fault logic control circuit, and the fault logic control circuit is used to output a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch, the overcurrent enabling signal input terminal is used to connect to the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. This high-voltage integrated circuit supports the external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, which can effectively reduce the occurrence of frequent shutdowns caused by false output of faults during the power-on stage of the circuit.

The utility model discloses an electromagnetic shielding protection device of a shielding type high-voltage integrated circuit, which comprises a shielding shell, the shielding shell comprises a conductive metal base and a conductive metal shell, the conductive metal shell is detachably arranged on the conductive metal base, a heat dissipation assembly is arranged at the top of the conductive metal shell, and the heat dissipation assembly comprises a heat pipe. The evaporation section of the heat pipe is arranged in the conductive metal shell, and the condensation section of the heat pipe penetrates through the conductive metal shell in a sealed mode and then is arranged outside the conductive metal shell. According to the utility model, the high-voltage integrated circuit is sealed and protected through the closed shielding shell, and moisture and dust are effectively prevented from entering the shielding shell, so that the high-voltage integrated circuit can adapt to complex and severe environmental conditions such as moisture and dustiness.

Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages or modules having diagonalized leads. First and second semiconductor dies are disposed on a substrate. First and second coils are configured on the substrate for a transformer. The transformer may include a core. The leads or pins may be aligned along a diagonal of the package body, providing increased creepage. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.

The application discloses a high-voltage integrated circuit, comprising a Schmitt circuit, a filter, a level conversion circuit, a double-pulse generator, a single DMOS drive circuit and an output circuit; an input end of the Schmitt circuit is electrically connected with an input signal, an output end of the Schmitt circuit is electrically connected with an input end of the filter, an output end of the filter is electrically connected with an input end of the level conversion circuit, an output end of the level conversion circuit is electrically connected with an input end of the double-pulse generator, an output end of the double-pulse generator is electrically connected with an input end of the single DMOS drive circuit, and an output end of the single DMOS drive circuit is electrically connected with the output circuit; the single DMOS drive circuit is used for merging and frequency dividing two pulse signals from the double-pulse generator; the application aims to provide a high-voltage integrated circuit, which reduces mutual interference between DMOS tubes in the circuit by adopting the single DMOS drive circuit, and simultaneously reduces design space.

The application relates to a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises a plurality of half-bridge drive circuit modules and a signal generation module connected with each half-bridge drive module, wherein the signal generation module comprises a first output end and a second output end, the first output end and the second output end are connected with a high-voltage signal input end and a low-voltage signal input end of the half-bridge drive circuit module respectively, the signal generation module generates a sinusoidal PWM signal, and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. In this way, the generated sinusoidal PWM signal does not need to be input by an external MCU, so that when the high-voltage integrated circuit is applied to the semiconductor circuit, the high-voltage integrated circuit can realize driving of a motor load by itself, can be applied to some scenes with simple motor driving functions, such as scenes only needing a fixed rotating speed, does not need an external MCU, so that the design of the whole control circuit can be simplified, and the cost of the controller is reduced.

The invention provides a high-voltage integrated circuit isolating ring structure for improving punch-through voltage. The high-voltage integrated circuit isolating ring structure comprises a P-type substrate, a high-voltage device region and an isolating ring region, the isolating ring region comprises a P-type buried layer, two N-type buried layers respectively positioned on two sides of the P-type buried layer, and a P-type injection layer positioned below the P-type buried layer and the two N-type buried layers, and the doping concentration of the P-type injection layer is higher than that of the P-type substrate. By arranging the P-type injection layer with higher doping concentration below the buried layer structure of the isolating ring, a punch-through current path in the P-type substrate can be effectively blocked, so that the punch-through voltage of the isolating ring is remarkably improved on the premise of not influencing the performance of a high-voltage device, and the reliability of an integrated circuit is enhanced.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), and particularly provides a split type bidirectional silicon controlled rectifier (SCR) device which is used for ESD protection of the high-voltage integrated circuit and is adjustable in turn-on voltage and maintaining voltage aiming at a bidirectional silicon controlled rectifier (DDSCR), and the split type bidirectional SCR device can be used for ESD protection of a high-voltage input / output port (I / O for short) and a power domain. The device has the advantages of being adjustable in turn-on voltage and maintaining voltage and the like, and can be suitable for integrated circuit ESD protection in various high-voltage power supply domains.

An integrated circuit testing assembly that includes: (i) a first slug configured to contact a first surface of a first set of pins of an integrated circuit; (ii) a second slug configured to contact a second surface of the first set of pins of the integrated circuit; (iii) a third slug configured to contact a first surface of a second set of pins of the integrated circuit; and (iv) a fourth slug configured to contact a second surface of the second set of pins of the integrated circuit.

The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate (1), a buried dielectric layer (2), a lateral power device (3), a longitudinal power device (4), and an isolation structure (5). The buried dielectric layer (2) is provided in the substrate, and comprises a first portion having a gradient thickness, and an opening (21) is formed in the buried dielectric layer (2). The lateral power device is provided above the first portion (22) of the buried dielectric layer, and comprises a source region (31) and a drain region (32) spaced apart in a direction parallel to the substrate (1). The longitudinal power device (4) comprises a well region (41), a drift region (42), a source region (43), and a drain region (44); the well region (41) is located in the substrate (1) above the opening (21) of the buried dielectric layer (2); the source region (43) is located in the well region (41), the drift region (42) passes through the opening (21) of the buried dielectric layer (2) and the well region (41), and comprises a region of the substrate (1) located below the buried dielectric layer (2); and the drain region (44) is located at the bottom of the drift region (42). The isolation structure (5) is located in the substrate (1) between the lateral power device (3) and the longitudinal power device (4), and has the bottom connected to the buried dielectric layer (2). The present application can expand the application of SOI high voltage integrated circuits.

The present invention discloses a semiconductor circuit, including a high-voltage integrated circuit and a three-phase inverter bridge. The high-voltage integrated circuit includes a PWM signal buffer module, a high-voltage drive module, a low-voltage drive module, and a bootstrap module. The PWM signal buffer module is electrically connected to the high-voltage drive module and the low-voltage drive module. The bootstrap module has three signal input terminals and three high-side floating power supply output terminals. The three signal input terminals are electrically connected to the three level output terminals of the PWM signal buffer module, and the three high-side floating power supply output terminals respectively supply power to the three upper bridge arms of the three-phase inverter bridge. The three high-voltage drive output terminals of the high-voltage drive module respectively drive the three upper bridge arms of the three-phase inverter bridge, and the three low-voltage drive output terminals of the low-voltage drive module respectively drive the three lower bridge arms of the three-phase inverter bridge. The technical solution of the present invention solves the problem of unstable bootstrap voltage, which easily causes insufficient power supply or circuit failure.

The invention provides an ultrahigh-voltage isolating ring structure and a manufacturing method thereof. The structure is composed of a plurality of high-voltage laterally diffused metal oxide semiconductors. In order to solve the problem of punch-through breakdown caused by junction isolation on a high-resistivity substrate in the prior art, a deep trench isolation structure is arranged between the high-voltage laterally diffused metal oxide semiconductors or between the high-voltage laterally diffused metal oxide semiconductors and a device of a high-voltage circuit. The deep trench isolation structure is filled with a dielectric material, a leakage path in the substrate is cut off in a physical isolation mode, the punch-through breakdown problem is fundamentally solved, the isolation voltage endurance capability and the device reliability in a high-voltage circuit are remarkably improved, the device area can be optimized, and the deep trench isolation structure is suitable for a high-voltage integrated circuit of 1,000 V or above.

The present invention provides a deep trench uniform field isolation device for a high-voltage integrated circuit and a manufacturing method thereof. A longitudinal floating field plate is formed by carving a groove between an LDMOS region and a high-voltage circuit and then filling it with a dielectric and polysilicon. The longitudinal floating field plate is evenly distributed on a third dielectric oxide layer to achieve isolation between the LDMOS region and the high-voltage circuit region, saving area compared to traditional PN junction isolation. Furthermore, the longitudinal floating field plate uses a first metal strip to correlate the potential of the high-voltage junction terminal with the potential of the LDMOS, achieving uniform potential distribution, achieving stronger voltage coupling, and improving withstand voltage.

The present invention relates to a semiconductor circuit, comprising a high-voltage integrated circuit and a switching tube; the high-voltage integrated circuit comprises a driving circuit, an undervoltage protection circuit, and a fault logic control circuit; the undervoltage protection circuit comprises multiple voltage comparison circuits and an undervoltage comparator, wherein the output of the undervoltage comparator is connected to the fault logic control circuit; each voltage comparison circuit comprises a pull-down resistor, a reference resistor, and a detection comparator, wherein the first end of the pull-down resistor is connected to a reference power supply, the second end of the pull-down resistor is grounded via the reference resistor, the second end of the pull-down resistor is also connected to the positive input of the detection comparator, the negative input of the detection comparator is used to connect to an external processor of the semiconductor circuit, and the output of the detection comparator is connected to the negative input of the undervoltage comparator. The semiconductor circuit can achieve flexible and adjustable undervoltage thresholds, can adapt to complex undervoltage protection requirements in the semiconductor circuit, and improve the stability and reliability of circuit operation.

The present invention relates to a low-EMI clock generation circuit for high-voltage integrated circuits, comprising a pseudo-random modulation power supply generation circuit and a clock generation and coupling output circuit. In the low-EMI clock generation circuit solution provided by the present invention, on the one hand, the oscillator power supply voltage VCC_OSC used by the clock generation circuit is only controlled by a reference signal and is not affected by PVT fluctuations, thereby ensuring the frequency stability of the reference clock signal OSC_out; on the other hand, a pseudo-random code with pseudo-random characteristics in both amplitude and time is used inside the pseudo-random modulation power supply generation circuit to modulate the oscillator power supply voltage, thereby making the frequency of the reference clock signal OSC_out have a random frequency jitter characteristic, thereby achieving the goal of reducing EMI interference. The implementation scheme of the present invention can be widely used in various types of high-voltage integrated circuit systems.

The present invention provides an output buffer circuit for various high-voltage integrated circuits. The circuit includes: a P-terminal inverter chain, an N-terminal inverter chain, n P-terminal output inverters, n N-terminal output inverters, n P-terminal output PMOS transistors, n N-terminal output NMOS transistors, n P-terminal output inverter control switches, n N-terminal output inverter control switches, a sampling switch SW, a working timing generation circuit, a load comparison quantization circuit, and a drive current selection circuit. The output buffer circuit proposed by the present invention does not require interrupting the normal working state of the drive chip, can adaptively adjust the drive current in real time by adaptively identifying the load size and the frequency of the input control pulse, maximally improve the efficiency of the drive circuit, reduce the design complexity of the peripheral circuit, and facilitate user use.

The application relates to the field of power electronics, in particular to a short-circuit protection circuit suitable for adapting bus voltage and a high-voltage integrated circuit thereof. The short-circuit protection circuit comprises a detection time adaptation unit, a detection time reference unit and a trigger unit. The detection time reference unit is used for generating a reference voltage. The detection time adaptation unit is used for receiving a short-circuit signal and the reference voltage, generating a trigger signal after a delay, and the delay time is inversely proportional to the difference between the voltage of the short-circuit signal and the reference voltage. The trigger unit is used for generating a short-circuit protection signal when the trigger signal is received. The high-voltage integrated circuit comprises a fault logic control unit, at least one fault detection unit and the short-circuit protection circuit. The fault logic control unit is used for shutting down the high-voltage integrated circuit when a feedback protection signal of any one unit is received. Therefore, the detection time can be automatically adjusted according to different bus voltages, and the bus voltage sensitive device or circuit can realize short-circuit protection quickly under the premise of maintaining the anti-mis-triggering capability.

The invention provides a high-voltage integrated circuit structure for improving punch-through voltage and a manufacturing method of the high-voltage integrated circuit structure. The structure comprises a P-type substrate, an N-type epitaxial layer, a high-voltage NLDMOS transistor and an isolating ring composed of a P well, a P-type buried layer and an N-type buried layer. The structure is characterized in that the structure further comprises a P-type injection region, the P-type injection region is arranged in the P-type substrate, and the P-type buried layer and the N-type buried layer are located between the P-type injection region and the N-type epitaxial layer. The deep P-type injection region can effectively block a deep punch-through path along the P-type substrate, and the punch-through voltage of the isolating ring is remarkably improved. The isolation performance is greatly improved, meanwhile, the influence on the breakdown voltage of the high-voltage NLDMOS transistor is extremely small, the manufacturing method does not need to add an additional photomask, and the manufacturing cost is effectively saved.

An intelligent power module (IPM) includes first, second, third, and fourth chip support elements, a first set of insulated gate bipolar transistors (IGBTs), a second set of IGBTs, a first set of super junction metal-oxide-semiconductor field effect transistors (MOSFETs), a second set of super junction MOSFETs, a fifth chip support element, a low voltage integrated circuit, a high voltage integrated circuit, and a molded package. The low voltage and high voltage integrated circuits are connected to the fifth chip support element. The molded package encapsulates the first, second, third, and fourth chip support elements, the first set of IGBTs, the second set of IGBTs, the first set of super junction MOSFETs, the second set of super junction MOSFETs, the fifth chip support element, the low voltage IC, and the high voltage IC.

The embodiment of the invention provides a temperature detection circuit, a temperature protection circuit and a high-voltage integrated circuit, and relates to the field of semiconductor high-voltage driving chips, and the temperature detection circuit comprises a reference current source circuit which is used for outputting zero-temperature-coefficient reference current and positive-temperature-coefficient proportional current; the semiconductor device group is connected to the reference current source circuit, and a first semiconductor device in the semiconductor device group receives the zero temperature coefficient reference current to generate a first voltage; a second semiconductor device in the semiconductor device group receives the positive temperature coefficient proportional current to generate a second voltage; and the processing circuit is connected to the semiconductor device group and is used for carrying out nonlinear term elimination processing on the first voltage and the second voltage so as to output target voltage, the target voltage is used for determining the real-time temperature of the high-voltage integrated circuit, and the target voltage and the temperature are in a linear relation. The temperature detection circuit provided by the invention can improve the accuracy of temperature detection, thereby improving the anti-interference capability of the system.

The invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a buried dielectric layer, a transverse power device, a longitudinal power device and an isolation structure. The buried dielectric layer is arranged in the substrate and comprises a first part with gradient thickness and an opening. The transverse power device is arranged above the first part of the buried dielectric layer and comprises a source electrode region and a drain electrode region which are arranged in a spaced mode in the direction parallel to the substrate. The longitudinal power device comprises a well region, a drift region, a source region and a drain region; wherein the well region is located in the substrate above the opening of the buried dielectric layer; the source region is located in the well region; the drift region penetrates through the opening of the buried dielectric layer and the well region, and comprises a region, located below the buried dielectric layer, of the substrate; the drain region is located at the bottom of the drift region. The isolation structure is located in the substrate between the transverse power device and the longitudinal power device, and the bottom is connected with the buried dielectric layer. According to the invention, the application of the SOI high-voltage integrated circuit is expanded.

A high-voltage three-phase bridge gate drive circuit relates to the technical field of high-voltage integrated circuits and comprises a logic input circuit, a narrow pulse generation circuit, a high-side circuit and a low-side circuit. The logic input circuit is provided with three high-side signal output ends and three low-side signal output ends; the narrow pulse generation circuit comprises three narrow pulse branches; the high-side circuit comprises three high-side branches, and the low-side circuit comprises three low-side branches. The method has the characteristics of good channel consistency, high reliability and the like.

The application provides a high-voltage integrated circuit, an under-voltage detection method and a semiconductor circuit, the high-voltage integrated circuit comprising a driving circuit, a power supply circuit, an under-voltage protection circuit and a fault logic circuit; the under-voltage protection circuit comprising a voltage detection circuit and an under-voltage detection circuit, the voltage detection circuit being configured to compare a voltage value of a power supply voltage with a voltage value of a preset first threshold voltage and generate a standard under-voltage signal; the under-voltage detection circuit being configured to perform operation processing on the standard under-voltage signal according to a preset judgment rule and generate an under-voltage signal; wherein the preset judgment rule is to judge whether the voltage value of the power supply voltage is higher than a voltage value of a second threshold voltage within a preset time period, if yes, the under-voltage signal drives a fault signal to shield a fault processing; if no, the under-voltage signal drives the fault signal to trigger the fault processing; the second threshold voltage is smaller than the first threshold voltage. The technical scheme of the application has high reliability.

The present invention provides a high-voltage integrated circuit, a counting method and a semiconductor circuit. The high-voltage integrated circuit includes an over-current protection circuit and a driving circuit. The input end of the over-current protection circuit is used to receive an external current signal, and the output end of the over-current protection circuit is connected to the driving circuit. The over-current protection circuit is used to judge the current signal according to a preset judgment rule to generate an over-current signal. The preset judgment rule is whether the number of times the current value of the current signal is greater than a preset current threshold within a preset time period exceeds a preset value. If so, the output of the over-current protection circuit is turned off. If not, an over-current signal is generated. The over-current protection circuit includes a timer and a counter. The timer is used to set the preset time period, and the counter is used to set the preset value and count the number of times the current value of the current signal is greater than the preset current threshold. The driving circuit drives an external switching transistor according to the over-current signal. The technical solution of the present invention can filter interference signals and has high reliability.

The invention provides a high-voltage isolating ring structure. The high-voltage isolating ring structure comprises a second conductive type semiconductor substrate; the first conductive type epitaxial layer is formed on the substrate; a laterally diffused metal oxide semiconductor structure formed in the epitaxial layer; and the second conductive type buried layer is arranged in an interface region of the substrate and the epitaxial layer. The second conductive type buried layer is provided with at least two doping concentration peak values at different depths along the depth direction of the substrate. One or more additional doping concentration peak values are formed in the deep position of the substrate, the resistivity profile of the buried layer can be accurately adjusted, the resistance of a deep layer area is increased, and a punch-through leakage path is effectively inhibited, so that the punch-through breakdown voltage of the structure is remarkably improved on the premise of not increasing additional photoetching masks and not sacrificing the turn-off voltage resistance performance, and the performance of the semiconductor device is improved. The problem that the punch-through breakdown voltage is low when an ultrahigh-resistivity substrate is adopted is solved, and the reliability of a high-voltage integrated circuit is improved.

This invention relates to a high-voltage integrated circuit and semiconductor circuit integrating two bootstrap circuits. The high-voltage integrated circuit internally includes a high-side drive circuit, a low-side drive circuit, and a bootstrap circuit. The bootstrap circuit includes a first bootstrap unit, a second bootstrap unit, and a switching unit. The first bootstrap unit is based on a resistor connected in series with a diode, and the second bootstrap unit is based on a switching transistor. The switching unit controls one of the first and second bootstrap units via an external control signal to provide a floating power supply for a drive signal on one upbridge arm of the high-side drive circuit, while the other outputs to an external circuit. This allows the switching unit to control the second bootstrap unit to form the bootstrap circuit, thus preventing charging of the bootstrap capacitor and significantly reducing the standby power consumption of the high-voltage integrated circuit.

The present invention relates to the field of undervoltage protection technology, and in particular to a relaxation oscillator, an undervoltage protection circuit, and a high-voltage integrated circuit. When an RS trigger RS3 of the relaxation oscillator is triggered, a first charge-discharge circuit sequentially enters a first pre-charge region, a first transition charge region, a first effective charge region, and a first discharge region, and a second charge-discharge circuit correspondingly enters a second effective charge region, a second discharge region, a second pre-charge region, and a second transition charge region, and so on. The relaxation oscillator is used to generate a clock signal when an undervoltage protection circuit detects an undervoltage fault, and then the undervoltage protection circuit is integrated into a high-voltage integrated circuit. Thus, a high-tuning linearity clock signal is used to replace a level-triggered undervoltage protection circuit, and various undervoltage faults are adapted to by changing the duration and frequency of the clock signal, thereby improving the stability and accuracy of the undervoltage protection.