62 results about "High voltage integrated circuits" patented technology

The invention relates to the technical field of high-voltage integrated circuits, and provides an under-voltage protection high-voltage integrated circuit. Comprising an RC filter circuit, a Schmidt circuit, a filter, a level conversion circuit, a temperature protection circuit, an undervoltage protection circuit, an overcurrent protection circuit, a fault logic control circuit, a fault output circuit, a bootstrap circuit, a dead zone interlocking circuit, a time delay circuit, a pulse circuit, a first high-voltage DMOS, a second high-voltage DMOS, an RS trigger, an output circuit and an AND gate. The under-voltage protection circuit comprises a voltage stabilizing circuit, a power supply voltage detection circuit, a comparator and a first NMOS tube. The input end of the voltage stabilizing circuit serves as the input end of the under-voltage protection circuit to be connected with power supply voltage, and the output end of the voltage stabilizing circuit is connected with the input end of the power supply voltage detection circuit and the negative input end of the comparator. According to the invention, the working stability and reliability of the HIVC in an application occasion with relatively large temperature change are improved, and the market competitiveness of a product is improved.

The invention relates to the technical field of high-voltage integrated circuits, in particular to a high-precision temperature detection module and a high-voltage integrated circuit with the high-precision temperature detection module. The current correction circuit comprises a resistor R3a, a resistor R3b, an MOS tube M3 and a triode Q3; one ends of the R3a and the R3b are connected with an operational amplifier OP of the reference current source circuit, and the other ends of the R3a and the R3b are connected with the MOS tube M3; the MOS tube M3 is respectively connected with a reference current source circuit VCC power supply and the MOS tube M2; and the Q3 is respectively connected with the other ends of the R3a and the R3b and the M3. According to the invention, constant current with zero temperature coefficient is output, so that a temperature detection result is more accurate, effective temperature protection of the HVIC can be realized, an integrated intelligent power driving chip of a high-voltage integrated circuit and an application system of the integrated intelligent power driving chip are prevented from being damaged by high temperature, and the reliability of the intelligent power driving chip HVIC is improved.

The invention relates to the technical field of intelligent power modules, in particular to a temperature protection circuit based on a hysteresis comparator and an intelligent power module with the same, and the circuit is characterized in that a reference current source module is connected with a temperature detection circuit, and the temperature detection circuit is connected with the positive input end of the hysteresis comparator through a resistor R1; one end of the resistor R1 and the positive input end of the hysteresis comparator are connected with one end of the resistor Rf, and the other end of the resistor Rf is connected with the positive output end of the hysteresis comparator; the reference current source module is connected with the negative input end of the hysteresis comparator through a resistor R; the temperature detection circuit detects the real-time temperature of the high-voltage integrated circuit and outputs a corresponding voltage signal, and when the real-time temperature exceeds or is lower than a set threshold voltage, the hysteresis comparator controls the high-voltage integrated circuit to be disconnected or connected with the power supply through internal connection or disconnection. According to the invention, the anti-interference capability of the temperature protection circuit can be effectively improved, the integrated intelligent power module is protected from being damaged by high temperature, and the reliability and market competitiveness of the intelligent power module are further improved.

The invention relates to the technical field of high-voltage integrated circuits, and provides an anti-noise test circuit and test method for a driving chip, which are used for testing the driving chip. Comprising a DC power supply, a first capacitor, a first oscilloscope, a first signal generator, a first transistor, an isolation power supply, a noise stress generator, a first inductor, a second transistor and a second signal generator. The driving chip is provided with a VCC port, an HIN port, an LIN port, a grounding end, an HO port, a VB port, a VS port and an LO port. The negative output end of the isolation power supply is connected with the VS port and the first end of the noise stress generator, the LO port is arranged in a suspended mode, and the second end of the noise stress generator is connected with the source electrode of the first transistor, the drain electrode of the second transistor and the first end of the first inductor. The anti-noise test circuit for the driving chip is high in test precision of the driving chip, high in product percent of pass and good in reliability.

The invention discloses an over-current protection delay time test method, a test circuit and a PCB, and the method comprises the steps: selecting a plurality of temperatures from a preset working temperature range as to-be-tested temperatures, and selecting any to-be-tested temperature for testing; controlling the high-voltage integrated circuit to start working and transmitting a pulse signal to the high-voltage integrated circuit; when the voltage of the PFC protection end is gradually increased or gradually reduced, recording the time for switching the output signal by the PFCO end of the high-voltage integrated circuit to obtain to-be-verified turn-off time and to-be-verified reset time; judging whether the to-be-verified turn-off time and the to-be-verified reset time are within a preset standard time range or not; if yes, selecting another to-be-tested temperature for testing, and returning to control the high-voltage integrated circuit to start working; according to the test method disclosed by the invention, whether the overcurrent protection delay of the high-voltage integrated circuit is normal or not can be verified under different temperature conditions, so that products with unqualified overcurrent protection turn-off delay time and reset delay time are prevented from flowing into the market.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), aims at an improved lateral silicon controlled rectifier (MLSCR), and particularly provides a multi-channel SCR device which is used for ESD protection of the high-voltage integrated circuit and is adjustable in trigger voltage and maintaining voltage, and the multi-channel SCR device can be used for achieving ESD protection of an input / output port (I / O for short) and a power domain. The device comprises two MLSCR structures, has the advantages of being adjustable in trigger voltage and maintaining voltage, high in latch-up resistance, high in robustness and the like, and can be suitable for integrated circuit ESD protection under various high-voltage power supply domains.

The present invention discloses a semiconductor circuit, including a circuit board and a high-voltage integrated circuit, the high-voltage integrated circuit includes a power supply undervoltage protection circuit, an inverter bridge drive circuit and an error reporting circuit, the power supply undervoltage protection circuit includes an undervoltage detection unit and a fault logic control unit, the signal input end of the fault logic control unit is electrically connected to the undervoltage detection unit, and the signal output end of the fault logic control unit is electrically connected to the inverter bridge drive circuit and the error reporting circuit respectively; the undervoltage detection unit includes a diode, a fourth resistor, a capacitor and a comparator, the diode, the fourth resistor and the capacitor form a charging circuit, the charging circuit is electrically connected to the reverse input end of the comparator, the same-direction input end of the comparator is electrically connected to the power supply, and the output end of the comparator is electrically connected to the fault logic control unit. The semiconductor circuit proposed by the present invention can realize that the undervoltage protection voltage rises according to the working time. When the work starts, the undervoltage protection voltage is low, and the undervoltage protection voltage rises after the work is stable.

The invention discloses a high-voltage integrated circuit and electronic equipment, and relates to the technical field of power electronics, and the high-voltage integrated circuit comprises a logic control circuit, a level shift circuit and a high-side circuit. Wherein the output end of the logic control circuit is connected with the input end of the level shift circuit, the output end of the level shift circuit is connected with the input end of the high-side circuit, and the output end of the high-side circuit is connected into the high-side transistor. The logic control circuit is used for outputting a reset signal based on an accessed low-side input signal when it is detected that the pulse width of the accessed high-side input signal is smaller than the pulse width of a preset pulse signal. The level shift circuit is used for outputting a reset voltage signal to the high-side circuit according to an accessed reset signal. And the high-side circuit is used for controlling the high-side transistor to enter a cut-off state directly based on an accessed reset voltage signal under the condition that common-mode interlocking stops, so that the problem of control failure of the electronic equipment caused by the fact that the high-side transistor and the low-side transistor are in a conducting state together is avoided.

The invention relates to the technical field of under-voltage protection, in particular to an under-voltage protection circuit and a high-voltage integrated circuit using the same, in the under-voltage protection circuit, when an under-voltage fault judgment module judges that an under-voltage fault occurs, an under-voltage fault signal is generated to drive an under-voltage time adaptation module to correspondingly generate a clock signal according to the duration of the under-voltage fault signal; the under-voltage frequency selection module reduces the frequency of the clock signal in stages according to the under-voltage value of the power supply voltage to generate a filtering clock signal, and the under-voltage value is in direct proportion to the frequency of the filtering clock signal; the under-voltage protection trigger module is used for not acting when the duration of the received filtering clock signal is less than the filtering trigger moment, and starting filtering from the filtering trigger moment and generating an under-voltage protection action signal if the duration is greater than or equal to the filtering trigger moment; therefore, the clock signal is used for replacing the level to trigger undervoltage protection, and filtering is achieved to avoid false triggering. And meanwhile, various under-voltage faults are adapted by changing the duration and frequency of the clock signal, so that the under-voltage protection precision is improved.

This invention relates to the field of intelligent power module technology, and particularly to a temperature protection circuit based on a hysteresis comparator and an intelligent power module incorporating the same. The circuit includes: a reference current source module connected to a temperature detection circuit, which is connected to the positive input terminal of the hysteresis comparator via a resistor R1; one end of resistor R1 and the positive input terminal of the hysteresis comparator are connected to one end of resistor Rf, and the other end of resistor Rf is connected to the positive output terminal of the hysteresis comparator; the reference current source module is connected to the negative input terminal of the hysteresis comparator via a resistor R; the temperature detection circuit detects the real-time temperature of the high-voltage integrated circuit and outputs a corresponding voltage signal. When the temperature exceeds or falls below a set threshold voltage, the hysteresis comparator internally controls the high-voltage integrated circuit to disconnect or connect to the power supply. This invention effectively improves the anti-interference capability of the temperature protection circuit, protects the integrated intelligent power module from damage due to high temperatures, and thus improves the reliability and market competitiveness of the intelligent power module.

A semiconductor device comprising a semiconductor substrate having a first cut side and an opposite second cut side, a circuit formed in or over the semiconductor substrate between the first and second cut sides, and a first scribelane portion between the circuit and the first cut side and a second scribelane portion between the circuit and the second cut side, the first scribelane portion including conductive scribelane structures, and the second scribelane portion being devoid of conductive scribelane structures.

The application relates to a high-voltage integrated circuit, a semiconductor circuit and a preparation method thereof. When the output voltage of a first low-voltage side power port meets a preset threshold range and a basic circuit of an HVIC is in a non-protection state, a pre-charge control circuit transmits a pre-charge signal to a bootstrap circuit, so that the basic circuit of the HVIC enters a pre-charge state; and when the basic circuit of the HVIC is in the pre-charge state, the pre-charge control circuit transmits a stop enabling signal to the basic circuit of the HVIC, so that the basic circuit of the HVIC stops outputting a driving signal; and then the bootstrap circuit can control the first low-voltage side power port to charge a first high-voltage side floating power port according to the acquired pre-charge signal, so as to realize pre-charge of the basic circuit of the HVIC. The integrated HVIC does not need an additional bootstrap circuit, the product application cost is reduced, the pre-charge time does not need to be designed in the MCU program design; the integrated HVIC can better guarantee the bootstrap capacitor voltage under the condition of power-off and power-on, and the product reliability is improved.

The present invention relates to a high-voltage integrated circuit and a semiconductor circuit. The high-voltage integrated circuit includes an overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit; the overcurrent protection circuit includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal, the overcurrent protection signal output terminal is connected to the fault logic control circuit, and the fault logic control circuit is used to output a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch, the overcurrent enabling signal input terminal is used to connect to the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. This high-voltage integrated circuit supports the external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, which can effectively reduce the occurrence of frequent shutdowns caused by false output of faults during the power-on stage of the circuit.

The utility model discloses an electromagnetic shielding protection device of a shielding type high-voltage integrated circuit, which comprises a shielding shell, the shielding shell comprises a conductive metal base and a conductive metal shell, the conductive metal shell is detachably arranged on the conductive metal base, a heat dissipation assembly is arranged at the top of the conductive metal shell, and the heat dissipation assembly comprises a heat pipe. The evaporation section of the heat pipe is arranged in the conductive metal shell, and the condensation section of the heat pipe penetrates through the conductive metal shell in a sealed mode and then is arranged outside the conductive metal shell. According to the utility model, the high-voltage integrated circuit is sealed and protected through the closed shielding shell, and moisture and dust are effectively prevented from entering the shielding shell, so that the high-voltage integrated circuit can adapt to complex and severe environmental conditions such as moisture and dustiness.

The invention relates to the technical field of high-voltage integrated circuits, and provides a high-voltage integrated circuit. Comprising a plurality of RC filters, a plurality of Schmidt circuits, a plurality of filter circuits, a plurality of level switching circuits, a dead zone interlocking circuit, a bootstrap circuit, a pulse circuit, a time delay circuit, an AND gate, a driving output circuit, a temperature protection circuit, an undervoltage protection circuit, an overcurrent protection circuit, a fault logic control circuit and a fault output circuit. The bootstrap circuit comprises a double-level bootstrap power supply circuit, a level shift circuit, an RS trigger circuit and an output buffer circuit, the input end of the double-level bootstrap power supply circuit is connected with a power supply, the output end of the double-level bootstrap power supply circuit is sequentially connected with the level shift circuit, the RS trigger circuit and the output buffer circuit, and the output end of the output buffer circuit is connected to the input end of the dead zone generation circuit. According to the high-voltage integrated circuit, the applicability, the reliability and the market competitiveness of the HVIC chip can be improved.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), and particularly provides a high-maintaining-voltage silicon controlled rectifier (SCR) device used for protection of the ESD of the integrated circuit compared with a gate-grounded N-channel metal oxide semiconductor transistor auxiliary triggered silicon controlled rectifier (GGSCR), so that the high-maintaining-voltage silicon controlled rectifier (SCR) device has the advantages that the high-maintaining-voltage silicon controlled rectifier (SCR) device is used for protection of the ESD of the integrated circuit, and the high-maintaining-voltage silicon controlled rectifier (SCR) device is used for protection of the ESD of the integrated circuit. The ESD protection circuit can be used for realizing ESD protection of an input / output port (I / O for short) and a power domain. According to the device, an anode structure and an adjustable MOSFET shunt structure are improved from a three-dimensional structure through layout design, and the device has the advantages of being high in maintaining voltage, high in latch-up resistance, high in robustness and the like and can be suitable for integrated circuit ESD protection in various power domains.

Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages or modules having diagonalized leads. First and second semiconductor dies are disposed on a substrate. First and second coils are configured on the substrate for a transformer. The transformer may include a core. The leads or pins may be aligned along a diagonal of the package body, providing increased creepage. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.

The application discloses a high-voltage integrated circuit, comprising a Schmitt circuit, a filter, a level conversion circuit, a double-pulse generator, a single DMOS drive circuit and an output circuit; an input end of the Schmitt circuit is electrically connected with an input signal, an output end of the Schmitt circuit is electrically connected with an input end of the filter, an output end of the filter is electrically connected with an input end of the level conversion circuit, an output end of the level conversion circuit is electrically connected with an input end of the double-pulse generator, an output end of the double-pulse generator is electrically connected with an input end of the single DMOS drive circuit, and an output end of the single DMOS drive circuit is electrically connected with the output circuit; the single DMOS drive circuit is used for merging and frequency dividing two pulse signals from the double-pulse generator; the application aims to provide a high-voltage integrated circuit, which reduces mutual interference between DMOS tubes in the circuit by adopting the single DMOS drive circuit, and simultaneously reduces design space.

The application relates to a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises a plurality of half-bridge drive circuit modules and a signal generation module connected with each half-bridge drive module, wherein the signal generation module comprises a first output end and a second output end, the first output end and the second output end are connected with a high-voltage signal input end and a low-voltage signal input end of the half-bridge drive circuit module respectively, the signal generation module generates a sinusoidal PWM signal, and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. In this way, the generated sinusoidal PWM signal does not need to be input by an external MCU, so that when the high-voltage integrated circuit is applied to the semiconductor circuit, the high-voltage integrated circuit can realize driving of a motor load by itself, can be applied to some scenes with simple motor driving functions, such as scenes only needing a fixed rotating speed, does not need an external MCU, so that the design of the whole control circuit can be simplified, and the cost of the controller is reduced.

The invention provides a high-voltage integrated circuit isolating ring structure for improving punch-through voltage. The high-voltage integrated circuit isolating ring structure comprises a P-type substrate, a high-voltage device region and an isolating ring region, the isolating ring region comprises a P-type buried layer, two N-type buried layers respectively positioned on two sides of the P-type buried layer, and a P-type injection layer positioned below the P-type buried layer and the two N-type buried layers, and the doping concentration of the P-type injection layer is higher than that of the P-type substrate. By arranging the P-type injection layer with higher doping concentration below the buried layer structure of the isolating ring, a punch-through current path in the P-type substrate can be effectively blocked, so that the punch-through voltage of the isolating ring is remarkably improved on the premise of not influencing the performance of a high-voltage device, and the reliability of an integrated circuit is enhanced.

The invention relates to the technical field of intelligent power module testing, in particular to a high-voltage integrated circuit testing method, which comprises the following steps of: starting a control signal generation unit, controlling to output a high-low level PWM pulse signal according to a preset frequency, and transmitting the high-low level PWM pulse signal to a controllable delay circuit through a line; after the controllable time delay circuit receives the PWM pulse signal, an instantaneous pulse signal is sent out according to the PWM pulse signal and is transmitted to an upper bridge arm transistor and / or a lower bridge arm transistor of the tested intelligent power module; the oscilloscope detects the on-off action time of an upper bridge arm transistor and / or a lower bridge arm of the detected intelligent power module and judges whether the on-off action time is matched with the PWM pulse signal output by the signal generation unit or not, if yes, the detected intelligent power module is qualified, and if not, the detected intelligent power module is unqualified. Accurate intelligent power module input and output action signal parameter electrical test results can be obtained, the test process is simple and convenient, the reliability is high, the cost is low, and the method can be suitable for intelligent power modules of various models.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), and particularly provides a split type bidirectional silicon controlled rectifier (SCR) device which is used for ESD protection of the high-voltage integrated circuit and is adjustable in turn-on voltage and maintaining voltage aiming at a bidirectional silicon controlled rectifier (DDSCR), and the split type bidirectional SCR device can be used for ESD protection of a high-voltage input / output port (I / O for short) and a power domain. The device has the advantages of being adjustable in turn-on voltage and maintaining voltage and the like, and can be suitable for integrated circuit ESD protection in various high-voltage power supply domains.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), aims at an improved bidirectional silicon controlled rectifier (MDDSCR), and particularly provides a multi-channel bidirectional silicon controlled rectifier (SCR) device with adjustable trigger voltage and maintaining voltage for ESD protection of the high-voltage integrated circuit, and the multi-channel bidirectional SCR device can be used for realizing ESD protection of an input / output (I / O) port and a power domain. The device has the advantages of being adjustable in trigger voltage and maintaining voltage, high in robustness and the like, and can be suitable for integrated circuit ESD protection in various high-voltage power supply domains.

An integrated circuit testing assembly that includes: (i) a first slug configured to contact a first surface of a first set of pins of an integrated circuit; (ii) a second slug configured to contact a second surface of the first set of pins of the integrated circuit; (iii) a third slug configured to contact a first surface of a second set of pins of the integrated circuit; and (iv) a fourth slug configured to contact a second surface of the second set of pins of the integrated circuit.

The present invention relates to the field of electronic circuit technology, and specifically discloses a high-voltage integrated circuit, including a signal input circuit, a first Schmitt circuit, a filter, a level conversion circuit, a high-voltage DOMS circuit, an RS trigger, a signal output circuit and a temperature-controlled double pulse circuit, wherein the first Schmitt circuit is electrically connected to the signal input circuit and the filter respectively, the level conversion circuit is electrically connected to the filter, the temperature-controlled double pulse circuit is electrically connected to the level conversion circuit and the high-voltage DOMS circuit respectively, and the RS trigger is electrically connected to the high-voltage DOMS circuit and the signal output circuit respectively. The present invention adds a temperature-controlled double pulse circuit to control the distance between the double pulses according to the chip power consumption problem, so as to avoid the double pulse GEN from increasing the chip power consumption and heating in a short time, and ensure that the RS trigger can obtain a driving signal, and the higher the chip temperature, the farther the distance between the two pulses.

The present application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate (1), a buried dielectric layer (2), a lateral power device (3), a longitudinal power device (4), and an isolation structure (5). The buried dielectric layer (2) is provided in the substrate, and comprises a first portion having a gradient thickness, and an opening (21) is formed in the buried dielectric layer (2). The lateral power device is provided above the first portion (22) of the buried dielectric layer, and comprises a source region (31) and a drain region (32) spaced apart in a direction parallel to the substrate (1). The longitudinal power device (4) comprises a well region (41), a drift region (42), a source region (43), and a drain region (44); the well region (41) is located in the substrate (1) above the opening (21) of the buried dielectric layer (2); the source region (43) is located in the well region (41), the drift region (42) passes through the opening (21) of the buried dielectric layer (2) and the well region (41), and comprises a region of the substrate (1) located below the buried dielectric layer (2); and the drain region (44) is located at the bottom of the drift region (42). The isolation structure (5) is located in the substrate (1) between the lateral power device (3) and the longitudinal power device (4), and has the bottom connected to the buried dielectric layer (2). The present application can expand the application of SOI high voltage integrated circuits.

The present invention discloses a semiconductor circuit, including a high-voltage integrated circuit and a three-phase inverter bridge. The high-voltage integrated circuit includes a PWM signal buffer module, a high-voltage drive module, a low-voltage drive module, and a bootstrap module. The PWM signal buffer module is electrically connected to the high-voltage drive module and the low-voltage drive module. The bootstrap module has three signal input terminals and three high-side floating power supply output terminals. The three signal input terminals are electrically connected to the three level output terminals of the PWM signal buffer module, and the three high-side floating power supply output terminals respectively supply power to the three upper bridge arms of the three-phase inverter bridge. The three high-voltage drive output terminals of the high-voltage drive module respectively drive the three upper bridge arms of the three-phase inverter bridge, and the three low-voltage drive output terminals of the low-voltage drive module respectively drive the three lower bridge arms of the three-phase inverter bridge. The technical solution of the present invention solves the problem of unstable bootstrap voltage, which easily causes insufficient power supply or circuit failure.

The invention provides an ultrahigh-voltage isolating ring structure and a manufacturing method thereof. The structure is composed of a plurality of high-voltage laterally diffused metal oxide semiconductors. In order to solve the problem of punch-through breakdown caused by junction isolation on a high-resistivity substrate in the prior art, a deep trench isolation structure is arranged between the high-voltage laterally diffused metal oxide semiconductors or between the high-voltage laterally diffused metal oxide semiconductors and a device of a high-voltage circuit. The deep trench isolation structure is filled with a dielectric material, a leakage path in the substrate is cut off in a physical isolation mode, the punch-through breakdown problem is fundamentally solved, the isolation voltage endurance capability and the device reliability in a high-voltage circuit are remarkably improved, the device area can be optimized, and the deep trench isolation structure is suitable for a high-voltage integrated circuit of 1,000 V or above.

The present invention provides a deep trench uniform field isolation device for a high-voltage integrated circuit and a manufacturing method thereof. A longitudinal floating field plate is formed by carving a groove between an LDMOS region and a high-voltage circuit and then filling it with a dielectric and polysilicon. The longitudinal floating field plate is evenly distributed on a third dielectric oxide layer to achieve isolation between the LDMOS region and the high-voltage circuit region, saving area compared to traditional PN junction isolation. Furthermore, the longitudinal floating field plate uses a first metal strip to correlate the potential of the high-voltage junction terminal with the potential of the LDMOS, achieving uniform potential distribution, achieving stronger voltage coupling, and improving withstand voltage.

The present invention relates to a semiconductor circuit, comprising a high-voltage integrated circuit and a switching tube; the high-voltage integrated circuit comprises a driving circuit, an undervoltage protection circuit, and a fault logic control circuit; the undervoltage protection circuit comprises multiple voltage comparison circuits and an undervoltage comparator, wherein the output of the undervoltage comparator is connected to the fault logic control circuit; each voltage comparison circuit comprises a pull-down resistor, a reference resistor, and a detection comparator, wherein the first end of the pull-down resistor is connected to a reference power supply, the second end of the pull-down resistor is grounded via the reference resistor, the second end of the pull-down resistor is also connected to the positive input of the detection comparator, the negative input of the detection comparator is used to connect to an external processor of the semiconductor circuit, and the output of the detection comparator is connected to the negative input of the undervoltage comparator. The semiconductor circuit can achieve flexible and adjustable undervoltage thresholds, can adapt to complex undervoltage protection requirements in the semiconductor circuit, and improve the stability and reliability of circuit operation.