17 results about "High voltage integrated circuits" patented technology

This invention relates to the field of intelligent power module technology, and particularly to a temperature protection circuit based on a hysteresis comparator and an intelligent power module incorporating the same. The circuit includes: a reference current source module connected to a temperature detection circuit, which is connected to the positive input terminal of the hysteresis comparator via a resistor R1; one end of resistor R1 and the positive input terminal of the hysteresis comparator are connected to one end of resistor Rf, and the other end of resistor Rf is connected to the positive output terminal of the hysteresis comparator; the reference current source module is connected to the negative input terminal of the hysteresis comparator via a resistor R; the temperature detection circuit detects the real-time temperature of the high-voltage integrated circuit and outputs a corresponding voltage signal. When the temperature exceeds or falls below a set threshold voltage, the hysteresis comparator internally controls the high-voltage integrated circuit to disconnect or connect to the power supply. This invention effectively improves the anti-interference capability of the temperature protection circuit, protects the integrated intelligent power module from damage due to high temperatures, and thus improves the reliability and market competitiveness of the intelligent power module.

The application relates to a high-voltage integrated circuit, a semiconductor circuit and a preparation method thereof. When the output voltage of a first low-voltage side power port meets a preset threshold range and a basic circuit of an HVIC is in a non-protection state, a pre-charge control circuit transmits a pre-charge signal to a bootstrap circuit, so that the basic circuit of the HVIC enters a pre-charge state; and when the basic circuit of the HVIC is in the pre-charge state, the pre-charge control circuit transmits a stop enabling signal to the basic circuit of the HVIC, so that the basic circuit of the HVIC stops outputting a driving signal; and then the bootstrap circuit can control the first low-voltage side power port to charge a first high-voltage side floating power port according to the acquired pre-charge signal, so as to realize pre-charge of the basic circuit of the HVIC. The integrated HVIC does not need an additional bootstrap circuit, the product application cost is reduced, the pre-charge time does not need to be designed in the MCU program design; the integrated HVIC can better guarantee the bootstrap capacitor voltage under the condition of power-off and power-on, and the product reliability is improved.

The utility model discloses an electromagnetic shielding protection device of a shielding type high-voltage integrated circuit, which comprises a shielding shell, the shielding shell comprises a conductive metal base and a conductive metal shell, the conductive metal shell is detachably arranged on the conductive metal base, a heat dissipation assembly is arranged at the top of the conductive metal shell, and the heat dissipation assembly comprises a heat pipe. The evaporation section of the heat pipe is arranged in the conductive metal shell, and the condensation section of the heat pipe penetrates through the conductive metal shell in a sealed mode and then is arranged outside the conductive metal shell. According to the utility model, the high-voltage integrated circuit is sealed and protected through the closed shielding shell, and moisture and dust are effectively prevented from entering the shielding shell, so that the high-voltage integrated circuit can adapt to complex and severe environmental conditions such as moisture and dustiness.

Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages or modules having diagonalized leads. First and second semiconductor dies are disposed on a substrate. First and second coils are configured on the substrate for a transformer. The transformer may include a core. The leads or pins may be aligned along a diagonal of the package body, providing increased creepage. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.

The application discloses a high-voltage integrated circuit, comprising a Schmitt circuit, a filter, a level conversion circuit, a double-pulse generator, a single DMOS drive circuit and an output circuit; an input end of the Schmitt circuit is electrically connected with an input signal, an output end of the Schmitt circuit is electrically connected with an input end of the filter, an output end of the filter is electrically connected with an input end of the level conversion circuit, an output end of the level conversion circuit is electrically connected with an input end of the double-pulse generator, an output end of the double-pulse generator is electrically connected with an input end of the single DMOS drive circuit, and an output end of the single DMOS drive circuit is electrically connected with the output circuit; the single DMOS drive circuit is used for merging and frequency dividing two pulse signals from the double-pulse generator; the application aims to provide a high-voltage integrated circuit, which reduces mutual interference between DMOS tubes in the circuit by adopting the single DMOS drive circuit, and simultaneously reduces design space.

The application relates to a high-voltage integrated circuit and a semiconductor circuit, wherein the high-voltage integrated circuit comprises a plurality of half-bridge drive circuit modules and a signal generation module connected with each half-bridge drive module, wherein the signal generation module comprises a first output end and a second output end, the first output end and the second output end are connected with a high-voltage signal input end and a low-voltage signal input end of the half-bridge drive circuit module respectively, the signal generation module generates a sinusoidal PWM signal, and outputs sinusoidal PWM signals with opposite phases through the first output end and the second output end. In this way, the generated sinusoidal PWM signal does not need to be input by an external MCU, so that when the high-voltage integrated circuit is applied to the semiconductor circuit, the high-voltage integrated circuit can realize driving of a motor load by itself, can be applied to some scenes with simple motor driving functions, such as scenes only needing a fixed rotating speed, does not need an external MCU, so that the design of the whole control circuit can be simplified, and the cost of the controller is reduced.

The invention provides a high-voltage integrated circuit isolating ring structure for improving punch-through voltage. The high-voltage integrated circuit isolating ring structure comprises a P-type substrate, a high-voltage device region and an isolating ring region, the isolating ring region comprises a P-type buried layer, two N-type buried layers respectively positioned on two sides of the P-type buried layer, and a P-type injection layer positioned below the P-type buried layer and the two N-type buried layers, and the doping concentration of the P-type injection layer is higher than that of the P-type substrate. By arranging the P-type injection layer with higher doping concentration below the buried layer structure of the isolating ring, a punch-through current path in the P-type substrate can be effectively blocked, so that the punch-through voltage of the isolating ring is remarkably improved on the premise of not influencing the performance of a high-voltage device, and the reliability of an integrated circuit is enhanced.

The invention belongs to the field of design of an electrostatic discharge (ESD) protection device of a high-voltage integrated circuit (IC), and particularly provides a split type bidirectional silicon controlled rectifier (SCR) device which is used for ESD protection of the high-voltage integrated circuit and is adjustable in turn-on voltage and maintaining voltage aiming at a bidirectional silicon controlled rectifier (DDSCR), and the split type bidirectional SCR device can be used for ESD protection of a high-voltage input / output port (I / O for short) and a power domain. The device has the advantages of being adjustable in turn-on voltage and maintaining voltage and the like, and can be suitable for integrated circuit ESD protection in various high-voltage power supply domains.

An integrated circuit testing assembly that includes: (i) a first slug configured to contact a first surface of a first set of pins of an integrated circuit; (ii) a second slug configured to contact a second surface of the first set of pins of the integrated circuit; (iii) a third slug configured to contact a first surface of a second set of pins of the integrated circuit; and (iv) a fourth slug configured to contact a second surface of the second set of pins of the integrated circuit.

The invention provides an ultrahigh-voltage isolating ring structure and a manufacturing method thereof. The structure is composed of a plurality of high-voltage laterally diffused metal oxide semiconductors. In order to solve the problem of punch-through breakdown caused by junction isolation on a high-resistivity substrate in the prior art, a deep trench isolation structure is arranged between the high-voltage laterally diffused metal oxide semiconductors or between the high-voltage laterally diffused metal oxide semiconductors and a device of a high-voltage circuit. The deep trench isolation structure is filled with a dielectric material, a leakage path in the substrate is cut off in a physical isolation mode, the punch-through breakdown problem is fundamentally solved, the isolation voltage endurance capability and the device reliability in a high-voltage circuit are remarkably improved, the device area can be optimized, and the deep trench isolation structure is suitable for a high-voltage integrated circuit of 1,000 V or above.

The invention provides a high-voltage integrated circuit structure for improving punch-through voltage and a manufacturing method of the high-voltage integrated circuit structure. The structure comprises a P-type substrate, an N-type epitaxial layer, a high-voltage NLDMOS transistor and an isolating ring composed of a P well, a P-type buried layer and an N-type buried layer. The structure is characterized in that the structure further comprises a P-type injection region, the P-type injection region is arranged in the P-type substrate, and the P-type buried layer and the N-type buried layer are located between the P-type injection region and the N-type epitaxial layer. The deep P-type injection region can effectively block a deep punch-through path along the P-type substrate, and the punch-through voltage of the isolating ring is remarkably improved. The isolation performance is greatly improved, meanwhile, the influence on the breakdown voltage of the high-voltage NLDMOS transistor is extremely small, the manufacturing method does not need to add an additional photomask, and the manufacturing cost is effectively saved.

An intelligent power module (IPM) includes first, second, third, and fourth chip support elements, a first set of insulated gate bipolar transistors (IGBTs), a second set of IGBTs, a first set of super junction metal-oxide-semiconductor field effect transistors (MOSFETs), a second set of super junction MOSFETs, a fifth chip support element, a low voltage integrated circuit, a high voltage integrated circuit, and a molded package. The low voltage and high voltage integrated circuits are connected to the fifth chip support element. The molded package encapsulates the first, second, third, and fourth chip support elements, the first set of IGBTs, the second set of IGBTs, the first set of super junction MOSFETs, the second set of super junction MOSFETs, the fifth chip support element, the low voltage IC, and the high voltage IC.

The embodiment of the invention provides a temperature detection circuit, a temperature protection circuit and a high-voltage integrated circuit, and relates to the field of semiconductor high-voltage driving chips, and the temperature detection circuit comprises a reference current source circuit which is used for outputting zero-temperature-coefficient reference current and positive-temperature-coefficient proportional current; the semiconductor device group is connected to the reference current source circuit, and a first semiconductor device in the semiconductor device group receives the zero temperature coefficient reference current to generate a first voltage; a second semiconductor device in the semiconductor device group receives the positive temperature coefficient proportional current to generate a second voltage; and the processing circuit is connected to the semiconductor device group and is used for carrying out nonlinear term elimination processing on the first voltage and the second voltage so as to output target voltage, the target voltage is used for determining the real-time temperature of the high-voltage integrated circuit, and the target voltage and the temperature are in a linear relation. The temperature detection circuit provided by the invention can improve the accuracy of temperature detection, thereby improving the anti-interference capability of the system.

A high-voltage three-phase bridge gate drive circuit relates to the technical field of high-voltage integrated circuits and comprises a logic input circuit, a narrow pulse generation circuit, a high-side circuit and a low-side circuit. The logic input circuit is provided with three high-side signal output ends and three low-side signal output ends; the narrow pulse generation circuit comprises three narrow pulse branches; the high-side circuit comprises three high-side branches, and the low-side circuit comprises three low-side branches. The method has the characteristics of good channel consistency, high reliability and the like.

The application provides a high-voltage integrated circuit, an under-voltage detection method and a semiconductor circuit, the high-voltage integrated circuit comprising a driving circuit, a power supply circuit, an under-voltage protection circuit and a fault logic circuit; the under-voltage protection circuit comprising a voltage detection circuit and an under-voltage detection circuit, the voltage detection circuit being configured to compare a voltage value of a power supply voltage with a voltage value of a preset first threshold voltage and generate a standard under-voltage signal; the under-voltage detection circuit being configured to perform operation processing on the standard under-voltage signal according to a preset judgment rule and generate an under-voltage signal; wherein the preset judgment rule is to judge whether the voltage value of the power supply voltage is higher than a voltage value of a second threshold voltage within a preset time period, if yes, the under-voltage signal drives a fault signal to shield a fault processing; if no, the under-voltage signal drives the fault signal to trigger the fault processing; the second threshold voltage is smaller than the first threshold voltage. The technical scheme of the application has high reliability.

The invention provides a high-voltage isolating ring structure. The high-voltage isolating ring structure comprises a second conductive type semiconductor substrate; the first conductive type epitaxial layer is formed on the substrate; a laterally diffused metal oxide semiconductor structure formed in the epitaxial layer; and the second conductive type buried layer is arranged in an interface region of the substrate and the epitaxial layer. The second conductive type buried layer is provided with at least two doping concentration peak values at different depths along the depth direction of the substrate. One or more additional doping concentration peak values are formed in the deep position of the substrate, the resistivity profile of the buried layer can be accurately adjusted, the resistance of a deep layer area is increased, and a punch-through leakage path is effectively inhibited, so that the punch-through breakdown voltage of the structure is remarkably improved on the premise of not increasing additional photoetching masks and not sacrificing the turn-off voltage resistance performance, and the performance of the semiconductor device is improved. The problem that the punch-through breakdown voltage is low when an ultrahigh-resistivity substrate is adopted is solved, and the reliability of a high-voltage integrated circuit is improved.

This invention relates to a high-voltage integrated circuit and semiconductor circuit integrating two bootstrap circuits. The high-voltage integrated circuit internally includes a high-side drive circuit, a low-side drive circuit, and a bootstrap circuit. The bootstrap circuit includes a first bootstrap unit, a second bootstrap unit, and a switching unit. The first bootstrap unit is based on a resistor connected in series with a diode, and the second bootstrap unit is based on a switching transistor. The switching unit controls one of the first and second bootstrap units via an external control signal to provide a floating power supply for a drive signal on one upbridge arm of the high-side drive circuit, while the other outputs to an external circuit. This allows the switching unit to control the second bootstrap unit to form the bootstrap circuit, thus preventing charging of the bootstrap capacitor and significantly reducing the standby power consumption of the high-voltage integrated circuit.