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Time-delay circuit for high-voltage integrated circuit

A high-voltage integrated circuit and delay circuit technology, applied in electrical components, single output arrangement, pulse processing, etc., can solve the problems of non-reset, malfunction of high-voltage integrated circuits, high level, etc., to achieve the effect of improving reliability

Active Publication Date: 2011-04-27
HANGZHOU SILAN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the external interference of the circuit or the interference signal in the input signal, there are some pulses in the input signal that are narrower than the noise width than the usual effective signal, and these pulses may cause the output of the high-voltage integrated circuit to produce a continuous high Level and can not be reset to low level, resulting in misoperation of high-voltage integrated circuits

Method used

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  • Time-delay circuit for high-voltage integrated circuit
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  • Time-delay circuit for high-voltage integrated circuit

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Embodiment Construction

[0040] The content of the present invention will be further described below in conjunction with the accompanying drawings.

[0041] figure 1 Structural diagram of a traditional delay circuit in a high-voltage integrated circuit. Such as figure 1 As shown, the delay circuit structure diagram currently used in high-voltage integrated circuits, in order to facilitate the description of the working principle of high-voltage integrated circuit signals from low-voltage areas to high-voltage areas, figure 1 Also included in the follow-up pulse generation circuit and level conversion circuit.

[0042]The delay circuit 116 is powered by a low voltage side power supply (VCC-GND), the input signal VIN is connected to the gates of the first PMOS transistor 101 and the first NMOS transistor 102, and the source of the first PMOS transistor 101 is connected to the substrate and connected to VCC, the source of the first NMOS transistor 102 is connected to the substrate and connected to GND...

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Abstract

The invention relates to a time-delay circuit for a high-voltage integrated circuit. The time-delay circuit for the high-voltage integrated circuit consists of a limit narrow time-delay circuit, a pulse generation circuit and a level conversion circuit. An input signal is connected to the input end of the limit narrow time-delay circuit; the output end of the limit narrow time-delay circuit is connected with the input end of the pulse generation circuit; both output ends of the pulse generation circuit are connected with both input ends of the level conversion circuit; and the limit narrow time-delay circuit is used for realizing the function of the conventional time-delay circuit when the pulse width of the input signal VIN is wider, generating a time delay TON for the rising edge of theinput signal VIN and generating a time delay TOFF for the falling edge of the input signal VIN, making TON greater than TOFF, and ensuring that the pulse width of the signal passing through the limitnarrow time-delay circuit is more than or equal to a predetermined value TMIN when the pulse width f the input signal VIN is narrower. The circuit can guarantee that all input signals in a low-voltage region can be transmitted successfully to a high-voltage region, and avoids error operation of the high-voltage integrated circuit so as to effectively enhance the reliability of the high-voltage integrated circuit.

Description

technical field [0001] The invention relates to delay circuit and filter circuit technology, in particular to a delay and filter control circuit for input signals in a high-voltage integrated circuit (HVIC), and the delay circuit also relates to a high-voltage DMOS technology in a high-voltage integrated circuit. Background technique [0002] A high-voltage integrated circuit is a gate drive circuit with functions such as undervoltage protection and logic control. It combines power electronics with semiconductor technology, gradually replaces traditional discrete components, and is increasingly used in IGBT, high-power MOSFET drive field. The core part of the high-voltage integrated circuit is the level conversion circuit, the function of which is to convert the signal of 0-15V to the ground into the signal of 600V-615V to the ground on the same wafer. [0003] Due to the needs of the application, after the input signal enters the high-voltage integrated circuit, a delay ci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K5/13H03K5/134
Inventor 冯宇翔吴建兴吴美飞
Owner HANGZHOU SILAN MICROELECTRONICS
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