Formation of a relaxed useful layer from a wafer with no buffer layer
A useful, wafer-based technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as long buffer layers, expensive processes, and difficulties
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example 1
[0162] Example 1: Referring to Figure 1a, this involves the following situation, wherein the wafer 10 comprises:
[0163] Si supporting substrate 1; and
[0164] • A strained layer 2 of SiGe with a defined Ge concentration, with a thickness smaller than the critical limiting stress thickness (as described above).
[0165] The strained SiGe layer 2 typically has a Ge concentration greater than 15%.
[0166] The strained SiGe layer 2 preferably has less than about 10 7 cm -2 defect density, such as dislocations.
[0167] The 15% Ge strained layer 2 and the 30% Ge strained layer 2 typically have thicknesses of about 250 nm and about 100 nm, respectively, thereby remaining below their respective critical limiting elastic strain thicknesses.
[0168] Referring to FIG. 1b, perturbation region 3 may be formed in Si support substrate 1 by implanting particles such as hydrogen (H) or helium (He).
[0169] The range of H or He implantation energies used is typically between 12 and ...
example 2
[0191] Example 2: Reference figure 2 , this example involves the same wafer 10 as Example 1, but also includes a relaxed Si layer on a strained SiGe layer.
[0192] Thus, strained layer 2 includes strained SiGe layer 2A and relaxed Si layer 2B.
[0193] The strained layer 2 has a thickness smaller than the stated critical thickness of SiGe, above which the SiGe layer relaxes.
[0194] The strained layer 2A has the same characteristics as the strained SiGe layer 2 of Example 1.
[0195] The relaxed Si layer 2B has a thickness much smaller than that of the whole strained layer 2, so that the strained layer 2 maintains the characteristics of the whole strained structure.
[0196] Relaxed Si layer 2B has a thickness of about several tens of nanometers.
[0197] Then the implementation of the removal method is the same as in Example 1.
[0198] The generation of conversion layer 4 identical to Example 1 and the additionally preferred heat treatment have the following effects: ...
example 3
[0211] Example 3: Reference image 3 , this example involves the same wafer 10 as Example 2, additionally including a strained SiGe layer on a relaxed Si layer.
[0212] Then, strained layer 2 is composed of strained SiGe layer 2A, relaxed Si layer 2B, and strained SiGe layer 2C.
[0213] The strained layer 2 has a thickness below the stated critical thickness of SiGe, above which SiGe relaxes.
[0214] The strained layer 2A has the same characteristics as the strained SiGe layer 2 of Example 1.
[0215] The thickness of layer 2A is preferably chosen to be greater than or equal to the usual thickness in which structural defects occurring near the interface with the conversion layer 4 may be confined after propagation of the perturbation in the conversion layer 4 .
[0216] This strained SiGe layer 2A will thus protect the relaxed Si layer 2B and the strained SiGe layer 2C from any structural defects throughout the relaxation of the strained layer 2 .
[0217] This sacrifici...
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