Chemical grooving technical process and device using rotation corrosion liquid spraying method

Abstract

The invention relates to chemical chamfering technology and device using rotating spraying corrosive method that takes selective accurate corrosion to the power electronic component silicon surface. It lays the silicon slice on the basal, and spraying the acid liquid from the top of silicon sheet to downward after pulverization. The method includes the following steps: taking equal rotating to the silicon sheet, adsorbing the acid corrosive from acid storage tank, and spraying onto silicon sheet surface equally. Under the process of silicon sheet, water proof is set, and the top water spraying is set to start when acid spraying stopped. Bottom water spraying is set to supply at the same time with the rotating, and stop at the same time with top water spraying. Each service position processes one silicon sheet, and the acid, water alternatively work.

Description

technical field [0001] The invention relates to a manufacturing process method of a power electronic device, in particular to a selective precision etching processing method on the surface of a silicon wafer of the power electronic device. The invention also relates to a device for the above method. Background technique [0002] Selective precision etching on the surface of silicon wafers is a commonly used process method in semiconductor devices. The surface of silicon wafers for power electronic devices also requires selective precision etching. Precision etching can be divided into wet etching using corrosive liquids and dry etching using atomic ionization, molecular radicals, and ions. The current dry etching can be further divided into three categories: [0003] 1. Plasma etching: using atomic radical processing, the corrosion is isotropic, and the equipment is a coaxial structure. [0004] 2. Reactive ion etching: using active ion processing, the corrosion is aniso...

AI Technical Summary

Problems solved by technology

[0011] Therefore, there are still some deficiencies in the selective precision etching process on the surface of the silicon wafer of the existing power electronic device, so that the performance of all aspects of the silicon wafer of the power electronic device is affected, and even a short circuit between the gate and the yin is caused. Flashover fault

With the improvement of quality requirements for power generation, transmission, and power consumption in all walks of life in society, the requirements for silicon wafers of power electronic devices are also getting higher and higher, especially for the uniformity of the surface corrosion depth of silicon wafers for power electronic devices. It is getting higher and higher. From the perspective of environmental protection, it is hoped that the less acid used in the process, the better. Therefore, the traditional soaking method can no longer meet the social requirements for silicon wafers of power electronic devices, and must be improved.

From the domestic and foreign patent retrieval situation, there is no report on the same or similar process method on the comb processing method of the cathode pattern of the power electronic device silicon wafer

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