Method for forming organic light-emitting layer

A technology for deposition of light-emitting layers and molecular layers, applied in coatings, metal material coating processes, gaseous chemical plating, etc., and can solve problems such as uneven layers, non-commercial scale, and production.

Inactive Publication Date: 2007-03-28
MECAROENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although thermal evaporation has the easy formation of Mq n layer, however, it has the Mq n Problems with non-uniform layers and impossibility for commercial-scale production

Method used

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  • Method for forming organic light-emitting layer
  • Method for forming organic light-emitting layer
  • Method for forming organic light-emitting layer

Examples

Experimental program
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Effect test

Embodiment 1

[0042] In this embodiment, a method of forming a light emitting layer using chemical deposition is described.

[0043] A substrate 22 (ITO-coated glass, film or wafer) is mounted on a heated susceptor 20 arranged in the reaction chamber 10 . Thereafter, the temperature inside the reaction chamber 10 is maintained at a temperature suitable for the reaction. The reaction temperature range is preferably from room temperature to 500°C. As used herein, the term "room temperature" is defined as an ambient temperature of about 15°C to about 25°C.

[0044] After the internal reaction temperature of the reaction chamber 10 is stabilized, the metal-containing material and the 8-hydroxyquinoline derivative are fed into the reaction chamber 10 . The metal-containing material is selected from aluminum-, gallium-, and zinc-containing materials. The aluminum-containing material was selected from the 16 compounds shown in Figure 3 and the compounds listed in Table 1 below. The aluminum-co...

Embodiment 2

[0076] This example describes the formation of Alq by molecular layer deposition 3 layer method.

[0077] The substrate 22 is mounted on the susceptor 20 arranged in the reaction chamber 10 . Thereafter, the internal temperature of the reaction chamber 10 is maintained at a temperature suitable for the reaction. The reaction temperature ranges preferably from room temperature to 500°C. As used herein, the term "room temperature" is defined as an ambient temperature of about 15°C to about 25°C.

[0078] After the internal reaction temperature of the reaction chamber 10 is stabilized, the aluminum-containing material is fed into the reaction chamber 10 . The aluminum-containing material was selected from 16 compounds with structures shown in FIG. 3 and some compounds listed in Table 1. The aluminum-containing material is vaporized before being fed into the reaction chamber 10 . Due to the good vaporization characteristics of aluminum-containing materials, they can be easily...

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Abstract

Disclosed herein is a method for forming a light-emitting layer on an industrial scale via chemical vapor deposition or molecular layer deposition. According to the method, a metal-containing material and an 8-hydroxyquinoline derivative having stable vapor pressure characteristics are used as raw materials and are vaporized.

Description

technical field [0001] The present invention relates to a method for forming an organic light-emitting layer, in particular to a method for forming an organic light-emitting layer on an industrial scale by chemical vapor deposition (CVD) or molecular layer deposition (MLD). Background technique [0002] The organic light-emitting layer is usually made of Mq n Composition, wherein M is a metal selected from aluminum, gallium and zinc, q is an 8-hydroxyquinoline derivative, and n is an integer from 1 to 3. [0003] Among them, Alq 3 is a compound having the structure shown in Fig. 1, and is a representative material for the light-emitting layer of an organic electroluminescence (EL) device. Formation of Mq on the substrate n The traditional method of layering using thermal evaporation is the physical vapor deposition (PVD) process. [0004] The thermal evaporation process is to convert the Mq n Molecules are fed into a reactor and then heated to high temperatures to depos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/18C23C16/4408
Inventor 张赫奎金铉昌
Owner MECAROENERGY CO LTD
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