Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces
a computer memory disk and slurry technology, applied in the field of chemical-mechanical polishing slurry and the method of planarizing or polishing computer memory disk surfaces, can solve the problems of poor surface quality, less than desirable polishing rate of polishing slurry, and inconvenient use of conventional polishing compositions
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[0015] The polishing compositions comprise (a) a liquid carrier, preferably water; (b) an abrasive; (c) purified, sodium-containing clay; and optional additives, such as (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal or insulating material removed from the surface being planarized. The compositions are useful in planarizing or polishing metal, particularly NiP, glass, ceramic, and glass-ceramic surfaces in the manufacture of computer memory disks. The compositions provide for high polishing efficiency, uniformity, and removal rate, with minimal defects, such as field loss of underlying structures and topography.
[0016] Ranges may be expressed herein as from “about” or “approximately” one particular value and / or to “about” or “approximately” another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular v...
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