Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device with resistor element

a technology of resistor element and resistor element, which is applied in the direction of logic circuit coupling/interface arrangement, instruments, process and machine control, etc., can solve the problems of unstable circuit operation, parasitic capacitance is inevitable added, and the resistor element with an ideal resistance component alone cannot be manufactured

Inactive Publication Date: 2006-08-17
SHIRATAKE SHINICHIRO +1
View PDF13 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in an actual fabrication process of a semiconductor device, a resistor element with an ideal resistance component alone cannot be manufactured and a parasitic capacitance is inevitably added.
Such a parasitic capacitance occurring in the resistor element fabrication process may lead to an unstable circuit operation, as described below.
However, when the active mode transits to the standby mode, as shown in FIG. 1, the following problem occurs due to parasitic capacitance added to each resistor element.
As a result, the potential at the reference node NREF rises, and the control of the output voltage VOUT in the standby mode becomes unstable.
In particular, if the time in which the input IN is held at “L” is short, the delay time would become short.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device with resistor element
  • Semiconductor device with resistor element
  • Semiconductor device with resistor element

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0040]FIG. 5A is a circuit diagram of a semiconductor device with resistor elements formed on a semiconductor substrate, according to a first embodiment of the present invention.

[0041] In the semiconductor device of the first embodiment, one of an active mode and a standby mode in an output setting unit 2 is selectively set by an output from a mode controller 5. A feedback potential corresponding to the set mode is fed from a reference node NREF to an output adjusting circuit 1. An output corresponding to the set mode is delivered to an output terminal 15.

[0042] The output adjusting circuit 1 comprises a comparison circuit 12 that compares a reference potential fed back from the reference node NREF to the input terminal 11 with a constant potential (const. V), and a control element 14 that controls an output current to be supplied to the output terminal 15 in accordance with the output from the comparison circuit 12.

[0043] The control element 14 is a PMOS transistor 14 having a g...

second embodiment

[0077]FIG. 8 is a block circuit diagram of a semiconductor device with resistor elements formed on the semiconductor substrate, wherein an n-number of output setting circuits are depicted by blocks. In this semiconductor device, a reference potential, which is fed back in accordance with one of two modes, i.e. an active mode or a standby mode, in the output setting unit 2 is switched by the output adjusting circuit 1 and delivered to the output terminal 15 and the output setting unit 2.

[0078] Those parts in the embodiment shown in FIG. 8, which are common to the parts of the first embodiment, are denoted by like reference numerals, and a description thereof is omitted. Only the differences from the first embodiment are described.

[0079] As shown in FIG. 8, the output setting unit 2 includes an n-number (n=a natural number, n≧2) of output setting circuits represented by blocks, i.e. a first output setting circuit 40-1 to an n-th output setting circuit 40-n.

[0080] Specifically, the ...

third embodiment

[0091]FIG. 9 shows an equivalent circuit of a semiconductor device having a parasitic capacitance along with a resistor element formed on a semiconductor substrate, according to a third embodiment of the present invention. FIG. 10 shows operational waveforms in the equivalent circuit. This embodiment corresponds to the prior art shown in FIG. 3 and FIG. 4.

[0092] In FIG. 9, a first charging circuit is connected between a first power supply terminal 51 and a second power supply terminal (ground terminal) 59. The first charging circuit includes a resistor element 55 and a PMOS transistor 52 having a source connected to the first power supply terminal 51, a drain connected to one end of the resistor element 55, and a gate connected to an input terminal 61. A second charging circuit, which includes a PMOS transistor 60 having a drain connected to a node 57 that is connected to the other end of the resistor element 55, a source connected to the first power supply terminal 51, and a gate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes first, second, third and fourth resistor elements. The first to fourth resistor elements have first ends commonly connected to a first node, and operate in one of first and second operation modes which are switchable. The first and second resistor elements have second ends connected to a second node and a third node, respectively. The third and fourth resistor elements have second ends connected to a fourth node and a fifth node via a first switch and a second switch, respectively. The first and second switches are opened in the first operation mode, and are closed in the second operation mode.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2002-302759, filed Oct. 17, 2002, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor device configured to have, for example, a resistor element with parasitic capacitance as a structural component. [0004] 2. Description of the Related Art [0005] In ordinary techniques, a resistor element is used as a voltage-division element or one of CR time constant elements in a power supply circuit for producing a constant potential or in a delay circuit for providing a signal delay within a semiconductor device. A resistor element has a resistance of a predetermined value between two nodes. In many cases, a resistor element of several-ten Ω to several-mega Ω is used. However, in an actual fabrication proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G05F1/10H01L21/822G05F1/56G05F1/565H01L23/62H01L27/04H01L29/8605H03K19/0175
CPCG05F1/565H01L29/8605
Inventor SHIRATAKE, SHINICHIROOIKAWA, KOHEI
Owner SHIRATAKE SHINICHIRO