Semiconductor device with FinFET and method of fabricating the same

Abstract

A FinFET semiconductor device has an active region formed of a semiconductor substrate and projecting from a surface of the substrate. A fin having a first projection and a second projection composed of the active region are arranged in parallel and at each side of a central trench formed in a central portion of the active region. Upper surfaces and side surfaces of the first projection and the second projection comprise a channel region. A channel ion implantation layer is provided at a bottom of the central trench and at a lower portion of the fin. A gate oxide layer is provided on the fin. A gate electrode is provided on the gate oxide layer. A source region and a drain region are provided in the active region at sides of the gate electrode. A method of forming such a device is also provided,

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION [0001] This application claims the benefit of Korean Patent Application No. 10-2005-0030947, filed on Apr. 14, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a semiconductor device with a Fin Field Effect Transistor (FinFET) and a method of fabricating the same. [0004] 2. Description of the Related Art [0005] Integration density of semiconductor devices continues to increase in order to improve performance and to reduce manufacturing costs. In order to increase the integration density, techniques that reduce a feature sizes of semiconductor devices are required. When fabricating contemporary semiconductor devices, the channel length of a Metal-Oxide-Semiconductor Field Effect...

AI Technical Summary

Benefits of technology

[0009] The present invention provides a semiconductor device including a FinFET structure without increasing the off leakage current.

[0010] The present invention also provides a method of fabricating a semiconductor device including a FinFET structure without increasing the off leakage current by improving local channel ion implantation.

Problems solved by technology

However, the shortened channel length results in short channel effects that degrade active switch characteristics of the device.

Moreover, because of being a planar channel device where channels are formed to be parallel with a surface of a semiconductor substrate, the MOSFET is not only unfavorable for device size reduction but also is not conducive to preventing short channel effects.

However, the conventional local channel ion implantation approach has a disadvantage in that both the source and the drain regions are doped as well as the channel region.

If the regions with mutually opposite conductivities meet to form a junction, the junction leakage current of the device can increase.

Therefore, a drawback of the conventional local channel ion implantation method is that off-leakage current of the resulting device can be increased.

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