Method and apparatus for wafer cleaning

Abstract

An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

Description

RELATED APPLICATIONS [0001] The present divisional application is related to, incorporates by reference and hereby claims the priority benefit of the following U.S. patent applications, assigned to the assignee of the present applications: U.S. patent application Ser. No. 09 / 891,849, filed Jun. 25, 2001 which is continuation-in-part of U.S. patent application Ser. No. 09 / 603,792, filed Jun. 26, 2000.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to the field of cleaning of a substrate surface and more particularly to the area of chemical and megasonic cleaning of a semiconductor wafer. [0004] 2. Discussion of Related Art [0005] In semiconductor wafer substrate (wafer) cleaning, particle removal is essential. Particles can be removed by chemical means or by mechanical means. In current state of the art, particles are usually removed by both a combination of mechanical means and chemical means. The current state of the art is a batch ...

AI Technical Summary

Benefits of technology

This approach significantly reduces cleaning time, allows for efficient cleaning of both wafer sides, and minimizes chemical usage by using low volumes with no reuse, while effectively removing particles from fragile structures without causing damage, thus improving wafer throughput and process control.

Problems solved by technology

However, this method is not possible when the wafers have any topography (patterns) that can be damaged by the brushes.

When spray methods are used in this way, the sonic pressure waves are confined to the droplets of the spray where they then lose a lot of their power.

When the droplets hit the wafer surface, most of the remaining sonic energy is lost.

None of these attempts to apply megasonics to a single wafer surface is sufficiently efficient as they do not reduce the single wafer cleaning time enough, which is of the utmost importance.

Moreover, none of the current single wafer techniques are able to clean sufficiently both the front and the backside of the wafer at the same time.

Contamination left on the device side can cause a malfunctioning device.

Contamination left on the non-device side (backside) can cause a number of problems.

Backside contamination can cause the photolithography step on the front side to be out of focus.

Contamination on the backside can cause contamination of the processing tools, which in turn can be transferred to the front side of the wafer.

Finally, metallic contamination on the backside, when deposited before a high temperature operation, can diffuse through the silicon wafer and end up on the device side of the wafer causing a malfunctioning of the device.

These poly-line dimensions and capacitor plate dimensions are so fragile a construction that they are prone to breakage.

These constructs are so fragile that agitation may break them and cause a defective chip.

This has worked well with poly-lines of 0.3 μm and above, however, when using poly-lines with dimensions smaller than 0.3 μm, megasonic sound agitation cannot be used as the megasonic sound agitation damages these fragile structures.

Although, even simple immersion into a cleaning liquid without agitation does remove some of the particles, it cannot remove all of the particles or even enough of the particles.

Nevertheless, no alternative has existed and therefore, this is the only cleaning technique used on these fine structures.

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