Gas supply device and apparatus for processing a substrate

Abstract

A gas supply device may include a first gas supply member that may be disposed in a chamber and around a substrate loaded in the chamber. The first gas supply member may include nozzles for providing a gas onto the substrate. A second gas supply member that may provide the gas supplied from at least one gas supply line to the first gas supply member.

Description

PRIORITY STATEMENT [0001] This U.S. non-provisional application claims benefit of priority under 35 U.S.C. § 119 from Korean Patent Application No. 2005-97979 filed on Oct. 18, 2005 in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. BACKGROUND [0002] 1. Field [0003] Example embodiments relate to a gas supply device and an apparatus for processing a substrate having the gas supply device, for example, a gas supply device for supplying a reaction gas onto a substrate. [0004] 2. Description of the Related Art [0005] A semiconductor manufacturing process may include a fabrication process, an electrical die sorting (EDS) process and / or a packaging process. Integrated circuits including various elements may be formed on a silicon wafer in the fabrication process. Electrical characteristics of the integrated circuits may be inspected in the EDS process. The integrated circuits may be sealed and separated individually in the...

AI Technical Summary

Problems solved by technology

However, the processing gas may not be uniformly sprayed from the nozzles 24 onto the substrate.

Additionally, if an etching gas is provided from the nozzles 24, a pattern that may be formed on the substrate by etching the layer may have a poor uniformity.

For example, this problem may become more serious if a semiconductor device has a minute design rule and / or if a semiconductor substrate has an increased size.

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