Semiconductor device and manufacturing method of the same

Inactive Publication Date: 2009-05-21
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0006]The present invention has been achieved for solving the foregoing problem and it intends to provide a semiconductor device capable of enhancing the driving performance and a method of manufacturing the same.
[0008]According to the invention, a distance between the liner nitride film and a channel region can be decreased and the stress by the liner nitride film can be applied sufficiently to a channel region. Accordingly, the driving performance can be enhanced.

Problems solved by technology

In the structure of the semiconductor devices of the patent publications described above, since the stress by the stress liner film is not always applied sufficiently to the channel region by way of the side wall, they involve a problem that the driving performance cannot always be enhanced sufficiently.

Method used

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  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same

Examples

Experimental program
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first embodiment

[0049]FIG. 8 is a cross sectional view showing the structure of a semiconductor device 500a according to a first embodiment. In this embodiment shown in FIG. 8, the thickness of the first layer along the lateral side of the gate structure is decreased to less than the thickness of the second layer along the upper surface of the substrate 10 in the basic technique shown in FIG. 1. That is, in the side wall shown in FIG. 8, the thickness of the first layer is decreased upward and the minimum value thereof is smaller than the thickness of the second layer. In such a structure, the distance between the liner nitride film 80 and the channel region can be decreased and the stress by the liner nitride film 80 can be applied sufficiently to the channel region.

[0050]FIG. 9 is a cross sectional view showing a structure of a semiconductor device 500b according to the first embodiment. In FIG. 9, the nitride film 90 shown in FIG. 8 is not removed entirely but left partially on the oxide film 50...

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Abstract

A semiconductor device capable of improving the driving power and a manufacturing method therefor are provided. In a semiconductor device, a gate structure formed by successively stacking a gate oxide film and a silicon layer is arranged over a semiconductor substrate. An oxide film is arranged long the lateral side of the gate structure and another oxide film is arranged along the lateral side of the oxide film and the upper surface of the substrate. In the side wall oxide film comprising these oxide films, the minimum value of the thickness of the first layer along the lateral side of the gate structure is less than the thickness of the second layer along the upper surface of the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The disclosure of Japanese Patent Application No. 2007-301208 filed on Nov. 21, 2007 including the specification, drawings and abstract is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The present invention concerns a semiconductor device and a manufacturing method of the same and it particularly relates to a technique of enhancing the driving performance by a stress liner film.[0003]In a semiconductor device having a PMOSFET or an NMOSFET, a structure of providing a stress liner film so as to cover a gate electrode has been adopted so far. By providing the stress liner film so as to exert a compressive stress to a channel region in the PMOSFET and exert a tensile stress to a channel region in the NMOSFET, the driving performance in the PMOSFET or the NMOSFET can be enhanced. The stress liner film is formed so as to cover the gate electrode and the side walls after forming side walls on both lateral sid...

Claims

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Application Information

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IPC IPC(8): H01L27/08H01L21/3205
CPCH01L21/28052H01L21/823412H01L21/823468H01L29/7843H01L27/088H01L29/665H01L29/6653H01L21/823807
InventorIWASAKI, TOSHIFUMIKUSAKABE, YOSHIHIKO
OwnerRENESAS ELECTRONICS CORP