Semiconductor device and method for manufacturing same
a semiconductor and capacitor technology, applied in semiconductor devices, capacitors, electrical devices, etc., can solve the problems of the damage degree of ferroelectric capacitors, and achieve the effect of higher processing efficiency
Inactive Publication Date: 2010-09-30
FUJITSU SEMICON LTD
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
[0017]It is an aspect of the embodiments discussed herein to provide a semiconductor substrate; a ferroelectric capacitor formed above the semiconductor substrate, and provided with a ferroelectric film; a wiring directly connected to an electrode of the ferroelectric capacitor; and an insulating film covering the wiring. A degree of damage which occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed, and the insulating film has processability higher than that of an aluminum oxide film.
Problems solved by technology
Furthermore, a degree of damage which occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
Method used
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Embodiment Construction
[0034]Embodiments will be explained in detail with reference to attached drawings hereinafter. FIG. 1 is a circuit diagram showing a configuration of a memory cell array of a ferroelectric memory (semiconductor device) to be manufactured by a method according to an embodiment.
[0035]The memory cell array includes a plurality of bit lines 103 extending in one direction, a plurality of word lines 104 and plate lines 105 extending in the direction perpendicular to the direction in which the bit lines 103 extend. A plurality of memory cells of the ferroelectric memory according to the present embodiment is arranged in an array so as to match with lattices composing these bit lines 103, the word lines 104, and the plate lines 105. The respective memory cells are provided with ferroelectric capacitors (memory unit) 101 and MOS transistors (switching unit) 102.
[0036]A gate of the MOS transistor 102 is connected to the word line 104. One source / drain of the MOS transistor 102 is connected to...
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A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a divisional application of Ser. No. 11 / 849,715 filed Sep. 4, 2007, which is a continuation of PCT / JP2005 / 003382 filed Mar. 1, 2005, the entire contents of which being incorporated herein by reference.TECHNICAL FIELD[0002]The present embodiment relates to a semiconductor device suitable for a nonvolatile memory equipped with a ferroelectric capacitor and a method for manufacturing the same.BACKGROUND ART[0003]In recent years, use of a ferroelectric film serving as a dielectric film for a capacitor has received much attention. Such a capacitor is called a ferroelectric capacitor, and a ferroelectric memory (FeRAM:Ferro-electric Random Access Memory) equipped with the ferroelectric capacitor is a nonvolatile memory. The ferroelectric memory has various merits such as the capability of high speed operation, low power consumption, and is excellent in write / read resistance. Further developments are expected in the future.[00...
Claims
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IPC IPC(8): H01L21/02
CPCH01L21/76834H01L27/11502H01L28/65H01L28/57H01L27/11507H10B53/30H10B53/00
Inventor KIKUCHI, HIDEAKINAGAI, KOUICHI
Owner FUJITSU SEMICON LTD