Photo-emission semiconductor device and method of manufacturing same
a technology of photoemission and semiconductors, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical devices, etc., can solve the problems of insufficient prevention of electrochemical migration, insufficient cover metal, and inability to tightly cover the light reflection layer, so as to achieve high precision and alignment accuracy, the effect of reliably covering the light reflection layer
Inactive Publication Date: 2011-10-06
SONY CORP
View PDF10 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0013]In the method of manufacturing the photo-emission semiconductor device according to the embodiment of the present invention, the plating seed layer is formed on the light reflection layer on the semiconductor layer and then, the protective layer is formed so as to cover the light reflection layer by the electroless plating using the plating seed layer. Therefore, the protective layer has highly precise dimensions and alignment accuracy as well as a minute organization.
[0014]According to the photo-emission semiconductor device and the method of manufacturing the same in the embodiment of the present invention, it is possible to reliably cover the light reflection layer provided on the semiconductor layer, by the protective layer that has a high mechanical strength and is formed by the electroless plating. Therefore, it is possible to reliably prevent the oxidization and the electrochemical migration of the light reflection layer, while forming the light reflection layer from silver or the like having high reflectance. As a result, it is possible to provide a photo-emission semiconductor device having high reliability, while supporting microminiaturization of dimensions.
Problems solved by technology
Therefore, it is conceivable that with the microminiaturization of the photo-emission semiconductor device itself expected in the future, the cover metal may not be able to tightly cover the light reflection layer, so that the prevention of the oxidization of the light reflection layer and the prevention of the electrochemical migration may become insufficient.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024]An embodiment of the present invention will be described below in detail with reference to the drawings.
[0025][Structure of Light Emitting Diode]
[0026]FIG. 1 illustrates a cross-sectional structure of a light emitting diode (LED) according to an embodiment of the present invention. Incidentally, FIG. 1 is a schematic diagram in which size and shape are different from those in reality.
[0027]The light emitting diode includes a semiconductor layer 20 containing a nitride-based III-V group compound semiconductor, a p-side electrode 30, and an n-side electrode 35. The semiconductor layer 20 is a layered product configured by laying a GaN layer 22, an n-type contact layer 23, an n-type cladding layer 24, an active layer 25, a p-type cladding layer 26 and a p-type contact layer 27 in this order. The p-side electrode 30 is provided on a surface of the p-type contact layer 27, and the n-side electrode 35 is provided on a surface of the GaN layer 2. Part of the p-side electrode 30 is co...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A photo-emission semiconductor device superior in reliability is provided. The photo-emission semiconductor device includes a semiconductor layer, a light reflection layer provided on the semiconductor layer, and a protective layer formed by electroless plating to cover the light reflection layer. Therefore, even if the whole structure is reduced in size, the protective layer reliably covers the light reflection layer without gap.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a photo-emission semiconductor device having such a structure that light emitted toward a side opposite to an exit window side is reflected by a light reflection layer toward the exit window side and a method of manufacturing the same.[0003]2. Description of the Related Art[0004]The external quantum efficiency of a photo-emission semiconductor device such as a light emitting diode (LED) is made up of two elements, namely, internal quantum efficiency and light extraction efficiency. An improvement in these efficiencies makes it possible to realize a long-life, low-power and high-output photo-emission semiconductor device. Here, the internal quantum efficiency in the former is improved by, for example, managing growth conditions precisely so as to obtain a high quality crystal with little crystal defect and dislocation, or providing a layered structure capable of suppressing the occurrence...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/60H01L33/52
CPCH01L33/0079H01L33/405H01L33/62H01L2924/0002H01L2924/00H01L33/0093H01L2933/0016H01L2224/0401H01L2224/05561H01L2224/05582H01L2224/05139H01L2224/05655H01L2224/03464H01L2224/0391H01L2224/05082H01L24/03H01L24/05
Inventor HIRAO, NAOKI
Owner SONY CORP