Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device

Abstract

After a liquid chemical treatment is finished, in parallel with a washing away treatment and / or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2006-091352, filed on Mar. 29, 2006, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a cleaning apparatus of a semiconductor substrate and a method of manufacturing a semiconductor device which are suitable for manufacturing a semiconductor device using a large diameter substrate.[0004]2. Description of the Related Art[0005]Recently, as a semiconductor device is more highly integrated, a gate width of the semiconductor device has been narrower, while maintaining the height of a gate electrode. As a result, the aspect ratio of the gate electrode has been larger. Moreover, a gap of metal wirings has also been narrower. Further, in order to reduce a capacitance between the wirings, a low dielectric constant film is of...

AI Technical Summary

Benefits of technology

[0011]It is an object of the present invention to provide a cleaning apparatus of a semiconductor substrate and a method of manufacturing a semiconductor device, which, even if a large diameter semiconductor substrate is used, can prevent defective products from occurring.

[0013]During repeated cleaning of the substrates 109 using a post-treating liquid chemical containing ammonium phosphate, ammonium fluoride or the like, crystals precipitate from the scattered liquid, thereby, resulting in the increase of the adhered matters 110. Even in such a situation, in a single-wafer-type post-treating apparatus for an eight-inch substrate, a problem due to the drop of the adhered matters 110 has not been known. However, in case of a single-wafer-type post-treating apparatus for a substrate having a large diameter of 300 mm or more, the traversing distance of the nozzle 101 is larger, and the arm for supporting the nozzle 101 is also heavier. Therefore, the nozzle 101 tends to vibrate largely, thereby resulting in the tendency of the adhered matters 110 to drop. Moreover, the vibration occurring when the substrate 109 is rotated becomes also larger, thereby, also resulting in the drop of the adhered matters 110. Furthermore, the used quantity of the post-treating liquid chemical becomes larger, and the amount of the adhered matters 110 becomes larger.

[0016]As a result, the inventor of the present invention has found that the occurrence of the defective products can be prevented by suppressing the drop of the adhered matters or alleviating the impact of the drop.

Problems solved by technology

Due to the deformation of the low dielectric constant film used as the interlayer insulating film, the shortage and the breakage of the wiring tend to occur.

Even in such a situation, in a single-wafer-type post-treating apparatus for an eight-inch substrate, a problem due to the drop of the adhered matters 110 has not been known.

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