Plasma processing apparatus and liner assembly for tuning electrical skews

Inactive Publication Date: 2012-01-26
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]Embodiments of the invention provide a liner assembly configured to balancing RF current flowing thereon. According to one embodiment of the inve

Problems solved by technology

The electrical skews could hardly be prevented in the plasma process because the traditional chamber liner failed to provide a balanced RF current flow and led to the defective plasma process.

Method used

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  • Plasma processing apparatus and liner assembly for tuning electrical skews
  • Plasma processing apparatus and liner assembly for tuning electrical skews
  • Plasma processing apparatus and liner assembly for tuning electrical skews

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Embodiment Construction

[0022]FIG. 2 illustrates a schematic view of a plasma processing apparatus according to one embodiment of the invention. The plasma processing apparatus may be a plasma etch chamber, a plasma enhanced chemical vapor deposition chamber, a physical vapor deposition chamber, a plasma treatment chamber, an ion implantation chamber or other suitable vacuum processing chamber. As shown in FIG. 2, the plasma processing apparatus 1 comprises a chamber lid 10, a chamber body 12 and a substrate support assembly 14. The chamber body 12 supports the chamber lid 10 to enclose a processing region. The substrate support assembly 14 is disposed in the chamber body 12 below the lid 10. All components of the plasma processing apparatus 1 are described below respectively.

[0023]In one embodiment, the chamber lid 10 includes a showerhead assembly 102, a lid plate 104, an insulator 106 and a spacer 108. The lid plate 104 is generally seated on the chamber body 12 and is typically coupled thereto by a hin...

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Abstract

The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Patent Application Ser. No. 61 / 366,462, filed Jul. 21, 2010, which is incorporated by reference in its entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates generally to a plasma processing apparatus for fabricating electronic substrates in which plasma is excited by RF power applied between electrodes. More specifically, the present invention relates to a liner assembly disposed inside the plasma processing apparatus for balancing RF current flow launched from the electrodes.[0004]2. Description of the Prior Art[0005]Electronic devices, such as flat panel displays and integrated circuits, commonly are fabricated by a series of process steps in which layers are deposited on a substrate and the deposited material is etched into desired patterns. The process steps commonly include physical vapor deposition (PVD), chemical vapor deposition (C...

Claims

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Application Information

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IPC IPC(8): C23F1/00B32B3/24C23C14/48B32B1/08C23F1/08H05H1/24
CPCH01J37/32082H01J37/32458Y10T428/13H01J37/32623H01L21/67069H01J37/32495
InventorCARDUCCI, JAMES D.CHEN, ZHIGANGRAUF, SHAHIDCOLLINS, KENNETH S.
OwnerAPPLIED MATERIALS INC