Low voltage detection circuit, nonvolatile memory apparatus including the same, and operating method thereof

a detection circuit and low voltage technology, applied in pulse generators, pulse techniques, instruments, etc., can solve problems such as inability to ensure normal operation

Active Publication Date: 2017-08-03
SK HYNIX INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution effectively stabilizes the low voltage detection signal, ensuring consistent operation even with fluctuating external voltages, preventing disruptions during program, read, and erase operations in nonvolatile memory apparatuses.

Problems solved by technology

If a voltage of a necessary level is not supplied, a normal operation may not be ensured.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low voltage detection circuit, nonvolatile memory apparatus including the same, and operating method thereof
  • Low voltage detection circuit, nonvolatile memory apparatus including the same, and operating method thereof
  • Low voltage detection circuit, nonvolatile memory apparatus including the same, and operating method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022]Hereinafter, a low voltage detection circuit, a nonvolatile memory apparatus including the same, and an operating method will be described with reference to the accompanying figures through various embodiments.

[0023]Referring to FIG. 1, a configuration diagram illustrating a representation of an example of a low voltage detection circuit in accordance with an embodiment is described.

[0024]The low voltage detection circuit 10 shown in FIG. 1 may include a first detection block 110 and a second detection block 120.

[0025]The first detection block 110 may be configured to detect the level of an external voltage VCCE based on a reference voltage VREF, in response to an enable signal EN_N. The first detection block 110 may also output a pre-detection signal DET_PRE.

[0026]The second detection block 120 may be configured to be driven by being supplied with the pre-detection signal DET_PRE. The second detection block 120 may also output a low voltage detection signal DET based on the l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A low voltage detection circuit includes a first detection block configured to detect a level of an external voltage according to a reference voltage, and output a pre-detection signal; and a second detection block configured to generate a low voltage detection signal of a beginning level regardless of a variation in a level of the pre-detection signal when the level of the pre-detection signal is detected as the beginning level.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. ยง119(a) to Korean application number 10-2014-0183348, filed on Dec. 18, 2014, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]Various embodiments generally relate to a semiconductor integrated apparatus, and more particularly, to a low voltage detection circuit, a nonvolatile memory apparatus including the same, and an operating method thereof.[0004]2. Related Art[0005]As an example of a nonvolatile memory apparatus, a flash memory apparatus may be mentioned. The flash memory apparatus needs a high voltage during an operation. To this end, the flash memory apparatus generates a high voltage by boosting an external voltage.[0006]For instance, a flash memory apparatus should apply a high voltage of approximately 10V to approximately 20V to a word line, for an operation such as a program operat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): G11C16/30H03K3/353G01R19/165
CPCH03K3/353G01R19/16552G11C16/30G11C5/144G11C5/147G11C5/148G11C16/06G11C16/12G11C16/20G11C16/34
InventorLEE, HYUN CHUL
OwnerSK HYNIX INC