Stacked package structure and manufacturing method thereof

a technology of stacking and packaging, applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical devices, etc., can solve the problems of package warpage, performance of the package device, and elevated temperature processes

Inactive Publication Date: 2019-03-28
NAN YA TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution effectively reduces warpage during high-temperature processing by balancing metal distribution across opposite sides of the package structure, enhancing the reliability and performance of the package device.

Problems solved by technology

Specifically, package warpage has been observed during the elevated temperature processes due to the different thermal expansion coefficient properties between the flip-chip package substrate material, copper conductor layers, the chip itself, and other substrate assembly materials.
Package warpage has been a critical issue that strongly influences the performance of the package device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stacked package structure and manufacturing method thereof
  • Stacked package structure and manufacturing method thereof
  • Stacked package structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012]The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0013]F...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A stacked package structure includes a first package structure having a first surface and a second surface opposite to the first surface. The first package structure includes a least one first die having a first active region disposed at a bottom of the first die; a first redistribution layer disposed on the top surface of the first die; and a plurality of first bumps disposed on the bottom surface of the first active region.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application is a Divisional Application of the U.S. application Ser. No. 15 / 859,703, filed Jan. 1, 2018, which is a Divisional Application of the U.S. application Ser. No. 15 / 345,490, filed Nov. 7, 2016, now U.S. Pat. No. 9,893,035, issued on Feb. 13, 2018 which is herein incorporated by reference.BACKGROUNDField of Invention[0002]The present invention relates to a stacked package structure.Description of Related Art[0003]Through the development of package structures, the tendency for the package to warp due to inherent stresses increases. Specifically, package warpage has been observed during the elevated temperature processes due to the different thermal expansion coefficient properties between the flip-chip package substrate material, copper conductor layers, the chip itself, and other substrate assembly materials. Package warpage has been a critical issue that strongly influences the performance of the package device. Thus,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L25/065H01L23/31H01L21/683H01L25/00
CPCH01L23/3128H01L2225/0652H01L2225/06517H01L2225/06548H01L21/6835H01L25/0652H01L25/50H01L25/0657H01L21/50H01L24/02H01L2224/02373H01L2224/18H01L24/19H01L2224/12105H01L2225/1058H01L25/105H01L2224/04105H01L21/568H01L2924/00014H01L2225/1035H01L23/5389
InventorLIN, PO-CHUN
OwnerNAN YA TECH