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Electron-emitting device, electron source, image display apparatus and television apparatus

a technology of electron-emitting devices and electron-emitting devices, which is applied in the manufacture of electrode systems, electric discharge tubes/lamps, and discharge tubes luminescnet screens. it is difficult to lower the drive voltage of the electron-emitting devices

Inactive Publication Date: 2010-06-15
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in each of the above-described electron-emitting devices, there is a problem that it is difficult to lower a drive voltage for the electron-emitting device.

Method used

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  • Electron-emitting device, electron source, image display apparatus and television apparatus
  • Electron-emitting device, electron source, image display apparatus and television apparatus
  • Electron-emitting device, electron source, image display apparatus and television apparatus

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

of Electron-Emitting Device

[0051]FIG. 1A and FIG. 1B are exemplary diagrams showing the structure of the electron-emitting device according to the first embodiment. FIG. 1A shows a schematic cross sectional view of the device, while FIG. 1B shows a schematic plan view thereof. FIG. 1A is a cross sectional view taken along a line A-A′ of FIG. 1B.

[0052]In FIG. 1A and FIG. 1B, the electron-emitting device includes a substrate (base member) 1, a first electrode 2 which is a cathode electrode, a second electrode 3 which is a gate electrode, an insulating layer 4 formed between the first and second electrodes 2 and 3, and an electron-emitting member 5 which emits an electron. In this embodiment, the second electrode 3 has a circular opening with a width of “W” (diameter of the circle). The third electrode 6 which is an anode electrode is disposed at a distance “h” from the second electrode 3 of the electron-emitting device. A selection signal output from the scanning circuit 403 is applie...

second embodiment

of Electron-Emitting Device

[0059]FIG. 2A and FIG. 2B are exemplary diagrams showing the structure of an electron-emitting device according to this embodiment. FIG. 2A shows a schematic cross sectional view of the device, and FIG. 2B shows a schematic plan view thereof. FIG. 2A is a cross sectional view taken along a line A-A′ of FIG. 2B. The electron-emitting device shown in FIG. 2A and FIG. 2B has a rectangular form. Note that a symbol “W” denotes the width of its opening (corresponding to the dimension in the short-side direction). When the opening has a square form, its one length (width) corresponds to “W”. Like the electron-emitting device of the first embodiment, the opening may have a circular or oval form.

[0060]In FIG. 2A and FIG. 2B, the use of the same symbols as those of FIG. 1A and FIG. 1B indicates the identical members, and the identical members are not repeatedly explained again, while only those different parts of the identical members are described. In the electron-...

example 1

[0121]In this example, the description will now be made to the electron-emitting device including the circular gate electrode 3 and a circular opening shown in FIG. 8. The cross sectional view of this device has the same structure as that shown in FIG. 1A.

[0122]With reference to FIG. 7A to FIG. 7E, the description will now be made to a method of manufacturing the electron-emitting device of the present example. FIG. 7A to FIG. 7E and FIG. 8 show the case wherein the one electron-emitting device includes one single cathode electrode. In this example, a plurality of electron-emitting devices are formed as shown in FIG. 9. In fact, one thousand cathode electrodes 2 are arranged, and the swing voltage Vswing is measured and evaluated. The distance W′ between the centers of the openings is equal to or greater than 30 μm. As shown in FIG. 9, the width W″ of the area around the opening is equal to or greater than 10 μm.

[0123]As described in the above embodiments, when the area Sg of the ga...

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PUM

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Abstract

An electron-emitting device comprises: (A) a first electrode; (B) an electron-emitting film which is provided on the first electrode; and (C) a second electrode which is provided above the electron-emitting film across a distance H from the electron-emitting film, and includes an opening which exposes at least a part of the electron-emitting film, wherein an area of the second electrode is at least four times larger than an area of the opening, and a ratio H / W of the distance H to a width W of the opening is not less than 0.07 but not more than 0.6.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an electron-emitting device, an electron source, an image display apparatus and a television apparatus.[0003]2. Description of the Related Art[0004]FE (field emission) type electron-emitting devices are getting attention as devices which emits an electron from a metal surface, by applying an intense electric field of 106V / cm or greater to the metal.[0005]FIG. 15 is an exemplary diagram of a Spindt-type electron-emitting device as an example of the FE-type electron emitting device. In FIG. 15, the Spindt-type electron-emitting device includes a substrate 111, a gate electrode 112, a cathode electrode 113, an insulating layer 114 and an emitter 115. In the Spindt-type electron-emitting device, electric field concentration occurs on the tip of the sharpened emitter 115 so as to emit an electron, upon application of a positive voltage higher than that of the emitter 115 to the gate electrode...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01J1/62
CPCH01J1/304H01J31/127H01J29/467
Inventor TAKEGAMI, TSUYOSHI
Owner CANON KK