Method for manufacturing vertical CMOS image sensor
a manufacturing method and image sensor technology, applied in the field of semiconductor devices, can solve the problems of complex process of manufacturing ccd, large power consumption, complicated drive system of ccd, etc., and achieve the effects of preventing or reducing the formation of circular defects in the image sensor, improving hydrogen annealing, and improving dark leakage characteristics
Active Publication Date: 2010-07-13
DONGBU HITEK CO LTD
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Benefits of technology
[0011]In general, example embodiments of the invention relate to a method for manufacturing a vertical CMOS image sensor having improved dark leakage characteristics through improved hydrogen annealing while preventing or reducing formation of circular defects in the image sensor.
Problems solved by technology
The CCD has a complicated drive system, has considerable power consumption, and requires a multi-step photo process.
Moreover, it is disadvantageous in that a process of manufacturing the CCD is complicated.
In particular, in the CCD, it is difficult to integrate a control circuit, a signal processing circuit, an analog / digital (A / D) converter, etc. on a CCD chip.
Hence, it is difficult to reduce a size of the CCD.
The conventional CMOS image sensor still has a problem of dark leakage characteristics.
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[0011]In general, example embodiments of the invention relate to a method for manufacturing a vertical CMOS image sensor having improved dark leakage characteristics through improved hydrogen annealing while preventing or reducing formation of circular defects in the image sensor.
[0012]Additional features will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the teachings herein. Features of the invention may be realized and attained by means of the instruments and combinations particularly pointed out in the written description and claims hereof as well as the appended drawings.
[0013]According to one embodiment, a method for manufacturing a vertical CMOS image sensor comprises: forming at least one color photodiode on a silicon epitaxial layer; forming a transistor on the epitaxial layer having the color photodiode; forming at least on...
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A method for manufacturing a vertical CMOS image sensor related to a semiconductor device is disclosed. A high-temperature double annealing process and / or an additional passivation nitride film are selectively applied in order to improve dark leakage characteristics and also to prevent or reduce an incidence of circular defects, thereby enhancing the quality and reliability of the vertical CMOS image sensor.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2007-0062701, filed on Jun. 26, 2007, which is hereby incorporated by reference in its entirety as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a semiconductor device, and more particularly to a method for manufacturing a vertical CMOS image sensor.[0004]2. Discussion of the Related Art[0005]In general, an image sensor is a semiconductor device which converts an optical image into an electrical signal. Image sensors are largely classified as a charge coupled device (CCD) or a complementary metal oxide silicon (CMOS) image sensor.[0006]The CCD has a complicated drive system, has considerable power consumption, and requires a multi-step photo process. Moreover, it is disadvantageous in that a process of manufacturing the CCD is complicated. In particular, in the CCD, it is difficult to integrat...
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IPC IPC(8): H01L21/8238
CPCH01L27/1462H01L27/14647H01L27/14683H01L27/14609H01L27/146
Inventor PARK, JEONG SU
Owner DONGBU HITEK CO LTD