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Method of manufacturing display device

一种显示器件、激励器的技术，应用在电固体器件、静态指示器、半导体器件等方向

Inactive Publication Date: 2007-11-07
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the circuit for dividing the video signal by 1 / 4 and the circuit for inputting pulses to the shift register require an operating characteristic of 28 MHz. Since it cannot be realized by TFT, an additional

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071](Example 1) In this example, a method of non-selectively introducing a metal element that promotes silicon crystallization to the entire surface of an amorphous silicon film will be described, and a process for producing a TFT using the silicon crystal film will be described.

[0072] Fig. 2 shows the manufacturing process of this embodiment. First, a silicon oxide film serving as the base film 202 is formed on a quartz substrate 201 to a thickness of 3000 Ȧ. The base film 202 is unnecessary if the surface of the quartz substrate is smooth and sufficiently cleaned.

[0073] In addition, as the substrate, it is preferable to use a quartz substrate, but if there is a substrate that can withstand the heat treatment temperature, it is not limited to quartz. For example, a semiconductor substrate on which an oxide film is formed can also be used. Next, an amorphous film 203, which is a starting film of a silicon crystal film, is formed to a thickness of 500 Ȧ by a reduced-p...

Embodiment 2

[0096] (Example 2) This example relates to a method of performing crystal growth in a parallel direction on a substrate called lateral growth by selectively introducing a catalytic element that contributes to silicon crystallization into an amorphous silicon film. Fig. 4 shows the manufacturing process of this embodiment.

[0097] First, a silicon oxide film with a thickness of 3000 Ȧ was formed as the base film 402 on the quartz substrate 401 . Next, an amorphous silicon film 403 having a thickness of 500 Ȧ was formed as a silicon crystal film starting film by thermal decompression CVD.

[0098] Next, a silicon oxide film having a thickness of 1500 Ȧ is formed and etched to form a mask indicated by 404 . The mask forms openings in the areas indicated at 405 . In the region where the opening 405 is formed, the amorphous silicon film 403 is exposed.

[0099] The opening 405 is an elongated rectangle having a longitudinal axis in the depth direction and the front direction of...

Embodiment 3

[0125] (Embodiment 3) This embodiment relates to a method of forming a gate insulating film in the structure shown in Embodiment 2. Fig. 6 shows the manufacturing process of this embodiment. First, a silicon crystal film 408 with a lateral growth region is obtained according to the process shown in FIG. 4(A) and FIG. 4(B). In addition, here, the amorphous silicon film of the starting film is 500 Ȧ.

[0126] After the silicon crystal film 408 was obtained, a thermal oxide film 409 was formed to a thickness of 200 Ȧ by performing heat treatment at 950° C. in an oxygen atmosphere containing 3% HCl. (Figure 6(A))

[0127] Next, the thermal oxide film 409 is removed. Furthermore, the silicon film is etched to form a pattern 410 as the active layer of the subsequent thin film transistor. (Figure 6(B))

[0128] Subsequently, an insulating film 504 is formed by a plasma CVD method. As the CVD insulating film 504, a silicon oxide film or a silicon nitride film 504 is formed to a ...

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Abstract

A driver circuit integration type (monolithic type) active matrix display device having high performance is formed by using thin film transistors (TFT). While a nickel element is added t an amorphous silicon film 203, a head treatment is carried out to thereby crystallize the amorphous silicon film. Further, by carrying out a heat treatment in an oxidizing atmosphere containing a halogen element, a thermal oxidation film 209 is formed. At this time, cyrstallinity is improved and gettering of the nickel element proceeds. TFTs are formed by using the thus obtained crystalline silicon film, and various circuits are constituted by using the TFTs, so that a data driver circuit capable of driving the active matrix circuit having the dot number of fifty thousands to three millions can be obtained.

Description

[0001] This application is a divisional application, and the application number of the parent case is 97126116.4; the prior application number of the parent case is JP96-344574, and the earlier application date is December 9, 1996. technical field [0002] The invention disclosed in this specification relates to an active matrix display device in an electronic circuit composed of a crystalline thin film semiconductor. Background technique [0003] After the technology of forming thin-film transistors (hereinafter referred to as TFTs) by forming amorphous or crystalline semiconductor films, such as silicon films, on glass substrates and quartz substrates, attempts have been made to use them in active matrix display circuits. Of course, in a simple circuit, only TFTs can be used to form an active matrix display circuit, and single crystal silicon integrated circuits can be used to form circuits such as data excitation (source excitation) and scanning excitation (gate excitation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/84H01L21/00G02F1/136G02F1/00G09G3/36G02F1/1368G09F9/30G09G3/32H01L21/322H01L21/331H01L21/332H01L21/335H01L21/336H01L21/77H01L27/12H01L29/786
CPCH01L29/66757H01L21/3221H01L29/78621H01L27/1214H01L27/12H01L27/1277G02F1/13454H01L21/02667
Inventor 立崎舜平小山润尾形靖
Owner SEMICON ENERGY LAB CO LTD
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