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Light emitting device and method for manufacturing the same

A technology of light-emitting elements and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., and can solve problems such as difficult control of light emission

Inactive Publication Date: 2008-01-23
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the control of luminescence is difficult

Method used

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  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0018] FIG. 1 is a cross-sectional view showing a light emitting element 10 according to a first embodiment of the present invention. FIG. 2 is a plan view of the light emitting element 10 . The light emitting element 10 is made of Si substrate 1, β-FeSi 2 membrane 2, lower electrode 3 and upper electrode 4. β-FeSi 2 The film 2 and the upper electrode 4 are provided on the front side of the substrate 1 . The lower electrode 3 is provided on the back side of the substrate 1 . The lower electrode 3 and the upper electrode 4 sandwich the substrate 1 and β-FeSi 2 film2.

[0019] The Si substrate 1 is an n-type Si (111) substrate manufactured by the Czochraski (CZ: Czochraski) method, that is, a substrate having a main surface with a plane orientation of (111). The size of the substrate is 2 inches. The substrate 1 has a surface 1A and a back surface 1B on opposite sides.

[0020] β-FeSi 2 Film 2 is provided on Si substrate 1 so as to cover surface 1A of Si substrate 1 . ...

no. 2 approach

[0033] Next, a second embodiment of the present invention will be described. The inventors found that if β-FeSi 2 annealing of the film, the β-FeSi 2 The conductivity type of the membrane changes from p-type to n-type. In this embodiment, the change of this conductivity type is used to fabricate n-type β-FeSi on a p-type Si substrate. 2 Light-emitting elements of the film.

[0034] The light emitting element 20 of this embodiment has the structure shown in FIG. 1 similarly to the first embodiment. However, the type and conductivity type of substrate 1 are different from those of β-FeSi 2 The conductivity type of the film 2 is different from that of the first embodiment.

[0035] The Si substrate 1 is a p-type Si(111) substrate produced by the floating zone (FZ) method. The size of the substrate is 2 inches.

[0036] β-FeSi 2 The conductivity type of the film 2 is n-type, which is different from that of the Si substrate 1 . β-FeSi 2 The film 2 is provided on the Si su...

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Abstract

A light emitting element (10) comprising a beta-FeSi2 film (2) provided on the surface of an Si substrate (1), a first electrode (3) provided on the back side of the Si substrate (1), and a second electrode (4) provided on the surface side of the beta-FeSi2 film (2). The beta-FeSi2 film (2) has a conductivity type different from that of the Si substrate (1). A pn junction is formed between the Si substrate (1) and the beta-FeSi2 film (2). The beta-FeSi2 film (2) functions as a light emitting layer having emission characteristics not likely to be affective by the type or purity of a substrate.

Description

technical field [0001] The present invention relates to a light emitting element and a manufacturing method thereof. Background technique [0002] In recent years, β-FeSi 2 attract attention. β-FeSi 2 It is abundant in resources and is a harmless and chemically stable semiconductor. β-FeSi 2 It is a direct migration type semiconductor with a forbidden bandwidth of about 0.85eV. β-FeSi 2 Epitaxial growth onto Si substrates is possible. Therefore, β-FeSi 2 It is expected to be used as a material for next-generation light-emitting and light-receiving elements with a small environmental load. [0003] However, on β-FeSi 2 There are a lot of ambiguities about the properties of . So far, no continuous β-FeSi 2 Film luminescence such reports. It has been observed that from FeSi buried on Si(100) substrates by ion implantation or molecular epitaxy (MBE) 2 The microcrystals emit photoluminescence (PL) reports. However, this light emission is immediately extinguished whe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/203H01L33/34
CPCH01L33/0004H01L33/40
Inventor 楚树成菅博文
Owner HAMAMATSU PHOTONICS KK