Low power consumption and low temperature drift voltage detection circuit independent from technique

Abstract

This invention relates to a voltage test circuit, which comprises three-path voltage division circuit, switch circuit and rectification circuit. The switch circuit is composed of NMOS tubes, wherein the NMOS tubes an NO grating are connected to the division circuit A point and the NMOS tube and NO source electrode and PNP transistor tube and Q1 source electrode are connected to the division circuit B point and the NMOS tube NO leakage electrode are connected to the division circuit C point and the PNP transistor Q1 base electrode and pool electrode are connected to the earth. The rectification circuit is composed of Smite triggers. The invention is characterized by the following: the division circuit one branch is connected in series to the voltage drift compensation circuit composed of NMOS tube and to the negative temperature parameter compensation circuit composed of PNP tube Q1.

Description

technical field [0001] The invention relates to a voltage detection circuit, in particular to a voltage detection circuit which is suitable for being built in a single-chip microcomputer, ROM, RAM or DSP and has nothing to do with low power consumption, low temperature drift and technology. Background technique [0002] As we all know, the voltage detection circuit is to detect the change of the supply voltage to a certain set value to generate a reset signal. When we set this standard voltage value, we hope that the circuit can generate a reset signal at this standard voltage value when it works in any environment. . However, in the prior art voltage detection circuit, with the change of process and temperature, this condition is often not satisfied, and the reset signal is only generated near the set standard voltage value, which may deviate from the standard voltage value in some limit states There are as much as 0.5V or more. [0003] See figure 1 As shown, this is an...

AI Technical Summary

Problems solved by technology

[0005] 1. Since the divided voltage value at A does not change with temperature, and the turn-on voltage at N0 changes with a negative temperature coefficient as the temperature changes, so at different temperatures, the Schmitt trigger output value LVR voltage value will fluctuate ;

[0006] 2. Since the divided voltage value at A does not change with the process deviation, but the turn-on voltage at N0 changes with the process deviation, so under different processes, the Schmitt trigger output value LVR voltage value will fluctuate

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