Thin film transistor array base board and its repairing method

A technology for thin film transistors and array substrates, which is applied in the field of thin film transistor array substrates and their repairs, can solve problems such as inability to repair, and achieves the effects of not affecting the aperture ratio, and being convenient and simple to repair.

Inactive Publication Date: 2008-10-22
NANJING CEC PANDA LCD TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above technology has its disadvantages. This technology can only repair the open circuit of the data line in the pixel interval. If the open circuit occurs at the junction of the data line and the gate scanning line or a short circuit occurs on the data line, it cannot be repaired.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor array base board and its repairing method
  • Thin film transistor array base board and its repairing method
  • Thin film transistor array base board and its repairing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] figure 2 It is a schematic structural diagram of a TFT substrate according to Embodiment 1 of the present invention.

[0036] refer to figure 2 , Figure 5A The thin film transistor array substrate includes a plurality of gate scanning lines 20 extending along a first direction; a plurality of data lines 30 extending along a second direction, the gate scanning lines 20 and the data lines 30 intersect to form a pixel area; Thin film transistor 31 and pixel electrode 40, thin film transistor 31 is made up of gate 311, source 312 and drain 313, gate 311 is electrically connected with gate scanning line 20, drain 313 is electrically connected with data line 30, source 312 Connect with the pixel electrode 40 through the contact hole 41, the gate 311 is formed on the first metal layer, the source 312 and the drain are formed on the second metal layer, there is a SiNx insulating layer 25 between the two layers to separate, the source 312 and the drain 313 are symmetricall...

Embodiment 2

[0042] image 3 It is a schematic structural diagram of a TFT substrate according to Embodiment 2 of the present invention.

[0043] refer to image 3 Different from the structure of the thin film transistor array substrate provided in Embodiment 1, there is no second protrusion 22b on the upper end of the outer shielding line 22 in this embodiment, and the repair line 32 is formed on the pixel electrode layer. The repair line 32 and the first The overlapping intersecting interlayer of the repair pad 23 and the outer shielding line 22 is further provided with a second repair pad 33 a and a third repair pad 33 b formed on the same metal layer (second metal layer) as the data line 30 .

[0044] Figure 8 It is a schematic diagram of repairing the short circuit at the junction of the data line and the gate scanning line by using Embodiment 2 of the present invention; Figure 9A with 9B Respectively, front and back edges Figure 8 Schematic cross-sectional view of IV-IV direc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The basal plate of film transistor array includes following parts: multiple gated scanning wires extended along first direction; multiple data wires extended along second direction, pixel area formed between crossed gated scanning wires and data wires; thin film transistors and pixel electrodes setup inside pixel area; being distributed on two sides of data wires, inner and outer sided shading wires formed on same metal layer to the gated scanning wires; there is at least one lug at one end of the outer shading wire or data wire, and the lug makes overlap between data wire and outer sided shading wire; the other end of outer sided shading wire and one end of repairing wire crossing gated scanning wire are overlapped; the other end of the repairing wire and the repairing pad overlapped with gated scanning wire are overlapped. The invention can be in use for repairing defects of open circuit and short circuit of data wires.

Description

technical field [0001] The invention relates to an array substrate and a repair method thereof, in particular to a thin film transistor array substrate for a liquid crystal display capable of repairing open circuit or short circuit of a data line and a repair method thereof. Background technique [0002] Thin film transistor liquid crystal display (TFT-LCD) panels use thin film transistors (TFT) to control the orientation of liquid crystal molecules to control the intensity of light transmission to display images. A complete TFTLCD panel usually includes a backlight module, a polarizer, a lower substrate of a TFT array, an upper substrate of a CF (color filter), a layer of liquid crystal molecules sandwiched between the upper and lower substrates, and a driving circuit. The display area on the TFT array substrate includes a plurality of sub-pixel areas, and each sub-pixel area is generally a rectangular or other shaped area formed by the crossing of two gate scanning lines a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/1362
Inventor 张锋
Owner NANJING CEC PANDA LCD TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap