Film transistor array substrates and its producing method, repairing method
A technology of thin film transistors and array substrates, applied in the fields of thin film transistor array substrates and its manufacture and repair, to achieve the effect of convenient and simple repair, without affecting the aperture ratio, and increasing the effect of existing processes
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Embodiment 1
[0029] figure 2 , image 3 is a schematic structural view of a thin film transistor array substrate according to Embodiment 1 of the present invention.
[0030] refer to figure 2 The thin film transistor array substrate includes a plurality of gate scanning lines 10 extending along a first direction; a plurality of data lines 20 extending along a second direction, the gate scanning lines 10 and the data lines 20 intersect to form a pixel area; Thin film transistor 40 and pixel electrode 30, metal pattern 11 is formed on gate scan line 10, thin film transistor 40 is made up of gate 41, source 42 and drain 43, gate 41 is electrically connected with gate scan line 10, drain The electrode 43 is electrically connected to the data line 20, the source electrode 42 is connected to the pixel electrode 30 through the contact hole 41, the gate electrode 41 and the gate scanning line 10 are formed on the first metal layer (M1), the source electrode 42, the drain electrode 43, The dat...
Embodiment 2
[0039] Figure 4 is a schematic structural view of a thin film transistor array substrate according to Embodiment 2 of the present invention.
[0040] refer to Figure 4 Different from the structure of the TFT array substrate provided in Embodiment 1, metal patterns 21 are formed under the data lines 20 in this embodiment, and the metal patterns 21 are formed on the same layer as the gate scanning lines 10 . The material of the metal pattern 21 is the same as that of the gate scan line 10 . In the process of manufacturing the array substrate, when patterning the first metal layer, the metal pattern 21 corresponding to the data line 20 is reserved, and the metal pattern 21 is compatible with other metal patterns of the same layer such as the gate 41 and the gate scanning line 10. separated from each other.
[0041] When an open circuit occurs on the data line 20, laser welding can be performed on both sides of the broken line from the back of the array substrate (outside the...
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