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A low resistance/high B value slice heat sensitive resistor and its making method

A technology for thermistors and manufacturing methods, applied in the direction of resistors with negative temperature coefficients, etc., to achieve the effects of ensuring accuracy, low manufacturing costs, and facilitating mass production

Active Publication Date: 2009-12-09
山东中厦电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are also people who use the method of protecting the porcelain body to prepare the terminal electrodes to avoid corrosion and prevent the extension of the electrodes, but the problem has not been fundamentally resolved so far.

Method used

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  • A low resistance/high B value slice heat sensitive resistor and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1. Preparation of low-resistance film

[0022] Take chemically pure (C.R) MnO 2 , NiO, CuO and CaO are weighed in a weight ratio of 43.845%: 18.834%: 34.058%: 3.267%, and ZrO with a diameter of Φ6 2 Ball, according to material: water: ball=1.0: 1.1: 1.5 (wt) ground on the planetary ball mill for 12 hours, dried at 90°C, and passed through a 200-mesh sieve, and put the sieved powder into a ceramic bowl 700°C / 2 hours pre-calcination; the powder after pre-calcination is put into the second ball mill for 16-18 hours (the method is the same as the first ball mill). The powder after the second ball milling was dried and passed through a 250 mesh sieve.

[0023] 2. rolling film

[0024] Add 40-50%wt PVA glue solution (solution concentration is 20%) to the powder, stir well, and keep 12 hours fermentation at normal temperature with relative humidity of 95%. The fermented slurry is directly put into the rolling film for rolling, and the gap of the rolling machine is constant...

Embodiment 2

[0037] Using the same process as in Example 1, the green thickness of the low-resistance diaphragm is taken as 8mm, the green thickness of the high B-value diaphragm is taken as 0.2mm, the total thickness after compounding is 1.0mm, and cut into 0603 chips after sintering , make terminal electrodes according to the conventional method, and the results measured in the constant temperature bath are as follows (statistics based on 100 chips)

[0038] R25 / Ω B25 / 50 / K H / mw C / sec ΔR / R / % ΔB / B / %

[0039] 50.8 3485 3.58 ±7 ±0.7

Embodiment 3

[0041] With the same process and method of Example 1, the formula of the high B value diaphragm is taken as MnO 2 :Co 3 o 4 :CuO:TiO:Nb 2 o 3 =62.5%: 23.565%: 8.0%: 3.168%: 2.767%, the green thickness of the low-resistance diaphragm is 5mm, the green thickness of the high B value film is 0.1mm, the green thickness of the composite diaphragm is 1.1mm, and the sintering After cutting into 0402-sized chips, make terminal electrodes according to conventional methods. The test results are as follows (statistics based on 100 chips)

[0042] R25 / Ω B25 / 50 / K H / mw C / sec ΔR / R / % ΔB / B / %

[0043] 302.2 3942 2.5 8.0 ±7.2 ±1.0

[0044] The results of Example 1, Example 2 and Example 3 above indicate that the technology provided by the present invention can conveniently realize low resistance / high B value chip NTCR. Compared with the chip NTCR with multilayer structure, it has lower resistance value and higher B value, and the process is simple and the manufacturing cost is low. The tec...

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Abstract

The invention discloses a chip thermistor in sensor technology in the field of information technology, and particularly discloses a low resistance / high B value chip thermistor and a manufacturing method thereof. The special feature of this low resistance / high B value chip thermistor is that the chip of the element is composed of a composite structure with a high B value thermosensitive layer sandwiched between two low resistance layers, and the low resistance layer is made of Mn-Ni - Composed of Cu-Ca, the high B value layer is composed of Mn-Co-Cu-Ti-Nb; the low resistance diaphragm forming the low resistance layer and the high B value forming the high B value thermosensitive layer are respectively made by film bonding technology Diaphragm, and laminated to make a composite diaphragm, high temperature calcined to form a heat-sensitive chip, cut and made into a chip NTCR terminal electrode. The invention adopts the lamination of the low resistance layer and the high B value layer, which greatly reduces the resistance of the element. The invention has the characteristics of simple process, low manufacturing cost and convenient mass production.

Description

(1) Technical field [0001] The invention relates to a chip thermistor in sensor technology in the field of information technology, in particular to a low resistance / high B value chip thermistor and a manufacturing method thereof. (2) Background technology [0002] Chip thermistor is an indispensable basic component in communication technology, computer technology and instrumentation industry. Chip thermistor is also an important direction for the development of the thermistor industry. At present, the chip thermistors (0805, 0603, 0402) produced at home and abroad are all made of transition metal oxides and tape-casting technology. The B value is the material constant of the thermistor, that is, the chip of the thermistor is sintered at high temperature to form a material with a certain resistivity. The B value can be calculated by measuring the resistance value at 25 degrees Celsius and 50 degrees Celsius (or 85 degrees Celsius); the B value is positively correlated with ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04
Inventor 陶明德刘倩
Owner 山东中厦电子科技有限公司
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