Phase-change storage device and its making method
A technology of phase change storage and manufacturing method, which is applied in the field of high storage density phase change storage devices, and can solve problems such as insufficient filling of holes and insufficient filling.
Active Publication Date: 2009-12-23
PROMOS TECH INC
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Problems solved by technology
However, there will be a problem that the hole size is too small to fill the bottom, or there will be a gap (Seam) that cannot be filled when the top of the sidewall film on both sides is joined.
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[0044] The phase-change memory device and the manufacturing method thereof according to the preferred embodiment of the present invention will be described in more detail below using cross-sectional diagrams of the manufacturing process. Figure 2a , 3a , 4a, 5a, 6a, 7a and 8a are top views of the manufacturing process of the phase change memory device according to the first embodiment of the present invention. Figure 2b , 3b , 4b, 5b, 6b, 7b and 8b are respectively along Figure 2a , 3a , 4a, 5a, 6a, 7a and 8a A-A' tangent manufacturing process sectional view. Figure 4c , 7c and 8c for along Figure 4a , 7a and 8a's B-B' tangent manufacturing process sectional view. Figure 4d It is a phase change memory device according to another embodiment of the present invention along Figure 4a The cross-sectional view of the manufacturing process of the B-B' tangent. Figure 7d with 8d for along Figure 7a with 8a The process section of the C-C' tangent line. Figure 7e ...
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The invention provides a phase change memory device comprising: a substrate; a first electrode layer formed on the substrate; a first phase change memory structure formed on the first electrode layer and electrically connected to the first electrode layer; a second phase change memory structure structure, formed on the first phase-change memory structure, and electrically connected to the first phase-change memory structure, wherein the first or second phase-change memory structure includes: a cup-shaped heating electrode, disposed in the first dielectric layer; the second An insulating layer, arranged on the first dielectric layer along the first direction, and partially covering the cup-shaped heating electrode; a second dielectric layer, arranged on the first insulating layer and the first dielectric layer; the first electrode structure , arranged in the second dielectric layer along the second direction, and partially covered by the first insulating layer and the cup-shaped heating electrode, wherein the above-mentioned first electrode structure has a pair of phase-change material spacers, which are arranged on the first electrode structure On a pair of side walls, and partly covered by the cup-shaped heating electrode. The invention also relates to a method for manufacturing the phase change memory device.
Description
technical field [0001] The invention relates to a phase-change memory device, in particular to a phase-change memory device with high storage density. Background technique [0002] Phase change memory (phase change memory, PCM) is an important candidate element for the 64MB next-generation excellent (stand-alone) non-volatile memory. How the element structure can produce the best element electrothermal characteristics will determine whether the phase change memory can Replacing flash memory (flash memory) has become an important research and development direction of the mainstream. However, how to use the same storage semiconductor manufacturing technology to produce non-volatile memory with higher storage density is an important development direction. [0003] Such as Figure 1a As shown, the patent (US 6,501,111) of INTEL Corporation of the United States uses a cup-shaped heating electrode (Cup-Shaped Bottom Electrode) 206 as a main body to realize a three-dimensional pha...
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IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 陈维恕
Owner PROMOS TECH INC