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Wafer bevel polymer removal

A wafer, clean gas technology, applied in the field of device manufacturing

Inactive Publication Date: 2010-01-13
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

raise wafer
Provide purge gas

Method used

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  • Wafer bevel polymer removal
  • Wafer bevel polymer removal
  • Wafer bevel polymer removal

Examples

Experimental program
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Embodiment Construction

[0013] The invention will now be described in detail with reference to several preferred embodiments shown in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and / or structures have not been described in detail in order not to unnecessarily obscure the present invention.

[0014] For ease of understanding, Figure 1 is a high-level flow diagram of a process used in an embodiment of the invention. A dielectric layer is formed on the wafer (step 104). Figure 2A is a cross-sectional view of the wafer 204 at the outer edge 206 of the wafer 204 . The curved outer edge 206 forms a chamfer 207 . Dielectric layer 208 is formed on wafer 204 (step 104). A photoresist mask 212 ...

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Abstract

A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.

Description

technical field [0001] The present invention relates to the fabrication of semiconductor-based devices. More specifically, the present invention relates to improved techniques for fabricating semiconductor-based devices with etched dielectric layers. Background technique [0002] During processing of a semiconductor wafer, well-known patterning and etching processes are used to define features of semiconductor devices in the wafer. In these processes, a photoresist (PR) material is deposited on a dielectric layer on a wafer and then exposed to light filtered through a photoresist. A reticle is typically a glass plate patterned with geometrical figures that prevent light from propagating through the reticle. [0003] After passing through the photolithography plate, the light contacts the photoresist surface. The light changes the chemical composition of the photoresist material so that the developer can remove a portion of the photoresist material. For positive photoresi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/3065C23F4/00
CPCH01L21/31138Y10S438/906H01L21/02087H01J2237/3342Y10S134/902H01L21/31116
Inventor J·常A·费舍尔P·勒温哈德特
Owner LAM RES CORP