Method for detecting plasma distribution density in responses chamber

Abstract

The invention discloses a method of detecting the distribution density of the plasma body in a reaction chamber. Firstly, a plurality of detecting devices are arranged on the surface of the silicon chip in the reaction chamber, and then anti-plasma body bombarding thin film is arranged at the upper part of the detecting device, and the detecting device comprises a sensitization element and a datastorage unit. Then the distribution density of the plasma body at the upper part of the silicon chip in the reaction chamber is analyzed through the detection of the spectral intensity emitted by theplasma body at the upper part of the silicon chip by the detecting device and through the detected spectral intensity. The detection is convenient and the detection result is accurate, the invention is mainly suitable for the reaction chamber of semiconductor process equipment, and also suitable for the chamber used for processing in other plasma body environments.

Description

technical field [0001] The invention relates to a detection method, in particular to a method for detecting plasma distribution density in a reaction chamber. Background technique [0002] There are many kinds of semiconductor silicon wafer processing technology in plasma environment, including etching, physical vapor coating, chemical vapor phase coating, etc. These semiconductor silicon wafer processing technologies are all carried out in plasma environment, so the plasma density And the uniformity of plasma density has higher requirements. In the process of semiconductor silicon wafer processing technology and hardware design, it is generally necessary to detect the distribution of plasma density during semiconductor silicon wafer processing. [0003] The commonly used method to detect the plasma density is to use the Langmuir probe to measure. The Langmuir probe measures the current flowing through the probe with an external negative bias according to the plasma sheath ...

AI Technical Summary

Problems solved by technology

[0004] The disadvantage of using this method is that the probe tip needs to be protected, so it is generally not used in the plasma formed by corrosive chemical gases in the process, so it can only be used for Langmuir probe testing. The plasma distribution law generated by the inert gas is consistent with the real process plasma distribution law

Moreover, since the probe is inserted into the plasma, there will be a certain degree of disturbance to the plasma, so the measured results deviate from the actual probe-free process measurement results.

Images