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Data accessing method for magnetic storage unit

A technology for magnetic memory and data access, which is applied in the field of magnetic storage unit access operations, and can solve problems such as data interference and data access failure

Active Publication Date: 2007-11-14
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After studying the traditional technology in detail, the present invention finds that if the bias magnetic field HBIAS is too strong, at least it will directly interfere with the data stored in the storage unit, resulting in the failure of data access

Method used

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  • Data accessing method for magnetic storage unit
  • Data accessing method for magnetic storage unit
  • Data accessing method for magnetic storage unit

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Embodiment Construction

[0067] The present invention changes the thickness of the lower pinned layer 162 in FIG. 10 to measure the success probability of flipping the magnetization vector of the free layer. The result is shown in FIG. 11 . Referring to FIG. 11 , the dot data represent the case where the thickness is 4.3nm. In addition, the data of triangular dots represent the case of a thickness of 4.5 nm, and the data of square dots represent the case of a thickness of 5.5 nm. The larger the thickness, the larger the bias magnetic field. Corresponding to the writing operation magnetic field in FIG. 6 , under the condition of H1 = H2 , one of the magnetic field magnitudes is taken as the abscissa. Wherein, the thickness of the upper fixed layer 158 is 3.0 nm as a reference thickness. For the distribution of dots, when the magnetic field is about 430e, the pair of magnetic moments of the free stack can be successfully flipped, and the flipping success rate can be maintained at a good result. When ...

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Abstract

The invention is a method of accessing magnetic memory data in double-state mode, using first current line and second current line to supply operating current and comprising: a data change operation to change a data of a memory cell; in a first stage, applying a first-direction current to both the first current line and the second current line; in a stage before stopping applying magnetic field, applying the first-direction current to both the first and second current lines to offset a part of the biased magnetic field.

Description

technical field [0001] The present invention relates to a magnetic memory technology, and in particular to an access operation of a magnetic storage unit, which can accurately read and change the stored data of the magnetic storage unit at a low operating current . Background technique [0002] Magnetic memory, such as magnetic random access memory (Magnetic Random Access Memory, MRAM) is also a kind of non-volatile memory, which has the advantages of non-volatility, high density, high read and write speed, and radiation resistance. It uses the magnetization vector of the magnetic substance adjacent to the insulating layer to record the data of 0 or 1 due to the magnitude of the magnetoresistance generated by the parallel or antiparallel arrangement. When writing data, the method generally used is two current lines, such as the magnetic storage unit selected by the intersection of the induced magnetic field of the bit line (Bit Line, BL) and the write word line (WWL), by ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15G11C11/16
Inventor 李元仁洪建中
Owner IND TECH RES INST