Substrate surface treating apparatus

A substrate surface and processing device technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve problems such as difficult to obtain thin films, achieve roughly uniform temperature, stable high-temperature heating effect, and highly homogeneous surface treatment Effect

Inactive Publication Date: 2007-12-12
M WATANABE CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, it is difficult to obtain the desired thin film on the silicon substrate S

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate surface treating apparatus
  • Substrate surface treating apparatus
  • Substrate surface treating apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Embodiments of the substrate surface treatment apparatus according to the present invention will be described in detail with reference to the following drawings. Embodiments of the silicon substrate surface treatment apparatus of the present invention are shown respectively with reference to FIGS. 1 to 4 .

[0046] Discussion of problem points

[0047] If the object is in the shape of a disc, the greater the distance between the heat conduction path passing through the central axis and from the center to the periphery, generally, the less heat energy received from the heat source. Therefore, for this embodiment adopting several heat conduction paths, it is necessary to adjust the heat medium flow rate of each heat conduction path one by one. Moreover, the flow rate can be adjusted appropriately according to the experiment.

[0048]In addition, in FIG. 6 of Case 2 of the old model, a plurality of heat conduction paths 12b for heat medium are ensured in the gas nozzle p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A substrate surface treating apparatus by which the temperature of a carrier gas can be increased high and thus treatment can be more uniformly performed. An upstream ring is connected to a heating medium inlet for applying a prescribed heating medium, and a downstream ring is connected to a heating medium outlet for ejecting the heating medium. A plurality of heat transmitting paths are connected to the upstream ring and the downstream ring by having flow directions of the adjacent heating medium reaching the downstream ring from the upstream ring are opposite, and a gas is used as the heating medium.

Description

technical field [0001] The present invention relates to a substrate surface treatment device, for example, a substrate surface treatment device for performing surface treatment on the substrate surface of a silicon substrate, a synthetic semiconductor substrate, a glass substrate, etc. by spraying a carrier gas onto the substrate surface. Background technique [0002] Patent document: JP-P11-80959 Gazette [0003] Substrate surface treatment equipment is used in semiconductor-related industries to process equipment for cleaning, oxidation, and thin film deposition on the surface of semiconductor substrates. In addition, in glass-related industries, it is also used for surface treatment of products such as liquid crystal displays and plasma displays. [0004] For example, FIG. 5 is a vertical cross-sectional view showing the structure of the MOCVD chamber of the silicon substrate surface treatment apparatus of Conventional Example 1. FIG. [0005] In FIG. 5, a silicon subst...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C23C16/44H01L21/304
CPCC23C16/4557H01L21/67109C23C16/45565H01L21/205C23C16/44H01L21/304
Inventor 梅田优
Owner M WATANABE CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap