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Ion implantation apparatus

An ion implantation device and ion beam technology, applied in the direction of discharge tubes, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of reduced transmission efficiency of ion beam 4, achieve the effect of enhancing transmission efficiency and simplifying the structure

Inactive Publication Date: 2010-06-16
NISSIN ION EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the transmission efficiency of the ion beam 4 is reduced

Method used

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  • Ion implantation apparatus
  • Ion implantation apparatus
  • Ion implantation apparatus

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Embodiment Construction

[0062] figure 1 is a partial plan view showing an exemplary embodiment of the ion implantation apparatus according to the present invention. for the same as or corresponding to Figure 16 Elements of the prior art shown in are given the same reference symbols and numerals. Hereinafter, differences from the prior art will be mainly described.

[0063] An ion implantation device is provided on the upstream side of the target 24 . More specifically, the ion implantation apparatus is placed near the downstream side of the collimator 14, which also serves as an ion beam deflector for separating Figure 16 Ion beam 4 and neutral particles 18 in . The ion implantation apparatus has a first magnet 50 and a second magnet 52 arranged to face each other in the Y direction across the path of the ribbon ion beam 4 . figure 1 In, the second magnet 52 (see image 3 ) is hidden under the first magnet 50 and does not appear. Therefore, its reference numeral 52 is described in parenthese...

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Abstract

An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereofare opposite between the first magnet and the second magnet.

Description

[0001] This application claims the benefit of Japanese Patent Application No. 2006-318435 filed on November 27, 2006 and Japanese Patent Application No. 2006-318436 filed on November 27, 2006, which are hereby incorporated by reference in their entirety. this. technical field [0002] The present invention relates to an ion implantation apparatus configured to irradiate a ribbon-shaped ion beam onto a target, the ribbon having a dimension in the X direction larger than a dimension in the Y direction substantially perpendicular to the X direction, which in the X direction The target has been scanned in the X direction or has not been scanned in the X direction for ion implantation. More specifically, the present invention relates to improvements in means for narrowing an ion beam in the Y direction. Background technique [0003] Figure 16 A prior art ion implantation apparatus of this type is shown. The same ion implantation apparatus is described in JP-A-08-115701 ( fig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01L21/265
Inventor 藤田秀树
Owner NISSIN ION EQUIP CO LTD