Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-dimensional magnetic memory

A magnetic memory, three-dimensional technology, applied in the field of memory, can solve the problem of reducing cell density

Inactive Publication Date: 2011-04-13
WESTERN DIGITAL TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Larger cell sizes for solid-state magnetic memories unfortunately involve reduced cell densities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional magnetic memory
  • Three-dimensional magnetic memory
  • Three-dimensional magnetic memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] 1-32 and the following description describe specific exemplary embodiments of the invention, thereby teaching those skilled in the art how to make and use the invention. In order to teach the principles of the invention, some conventional aspects of the invention are simplified or omitted. Those skilled in the art will appreciate that variations from these embodiments fall within the scope of the invention. Those skilled in the art will appreciate that the features described below can be combined in various ways to form multiple variations of the invention. As a result, the invention is not to be limited by the specific embodiments described below, but only by the claims and their equivalents.

[0049] FIG. 1 is a cross-sectional view of a magnetic memory 100 in an exemplary embodiment of the present invention. The cross-sectional view in Figure 1 shows only a portion of the magnetic memory 100, as an actual magnetic memory could extend farther in the X, Y or Z direct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

Description

technical field [0001] The present invention relates to the field of memory, in particular to a three-dimensional magnetic memory including a stack of data storage layers. More specifically, the three-dimensional magnetic memory allows the transfer of bits between data storage layers. Background technique [0002] Solid-state memory is a non-volatile storage medium that uses non-moving parts. Some examples of solid state memory are flash memory and MRAM (Magnetoresistive Random Access Memory). Solid state memory offers an advantage over traditional disk drives in that data transfer to and from solid state memory occurs at much higher rates than is possible with electromechanical disk drives. Solid state memory can also have a longer operating life and can also be more durable due to the absence of moving parts. One problem with traditional solid-state memory is that the storage capacity is much smaller than what electromechanical disk drives can achieve. For example, com...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/02H01L27/22
CPCG11C11/14G11C5/02G11C19/0808G11C11/15
Inventor 小罗伯特·E·方塔纳安德烈亚斯·莫瑟哈尔·J·罗森布鲁斯·D·特里斯曾庆骅
Owner WESTERN DIGITAL TECH INC