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Flash memory device and method for manufacturing thereof

A storage device and flash technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem of floating gate charge not dissipating

Inactive Publication Date: 2008-07-02
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] One problem with prior art flash memory is that the charge around the floating gate may not dissipate even after subsequent steps have taken place

Method used

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  • Flash memory device and method for manufacturing thereof
  • Flash memory device and method for manufacturing thereof
  • Flash memory device and method for manufacturing thereof

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Embodiment Construction

[0010] When the terms "on" or "over" are used in the present invention when referring to a layer, region, pattern or structure, it is understood that said layer, region, pattern or structure may be placed directly on top of another layer or Structurally, or there may also be intervening layers, regions, patterns or structures. When the terms "under" or "below" are used in the present invention when referring to a layer, region, pattern or structure, it is understood that said layer, region, pattern or structure may be placed directly under another layer or structure, or intervening layers, regions, patterns or structures may also be present.

[0011] Referring to FIG. 1, a substrate 20 may be prepared and divided into a cell area and a peripheral area. In one embodiment, when forming device isolation layer 26 , oxide film 21 , nitride film 22 , and insulating layer 23 may be sequentially formed on substrate 20 . The insulating layer 23 may be any suitable material known in t...

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PUM

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Abstract

The invention provides a flash memory device and a manufacturing method thereof. A device isolation layer, a tunnel oxide film, and a floating gate may be formed on the substrate. An oxide-nitride-oxide (ONO) layer may be formed on the substrate, and a control gate may be formed on the ONO layer. A spacer may be formed of a high temperature oxide film and a nitride film on side walls of the control gate.

Description

technical field [0001] The present invention relates to a flash memory device and a manufacturing method thereof. Background technique [0002] A flash memory is a nonvolatile storage medium that can store data without being damaged even if power is not supplied. The flash memory can perform data processing such as recording, reading, and deleting at a relatively high speed. Therefore, flash memory is often used in Bios of personal computers and data storage in set-top boxes, printers and network servers. Recently flash memory is also used in digital cameras and mobile phones. [0003] For flash memory, cycle and data retention performance is critical. Perhaps often the most important performance is cycling, which refers to the fact that while reading, writing, and erasing data can be repeated several times, the operation of moving electrons in and out of the floating gate can be repeated without changing the flash memory. performance. If electrons in the floating gate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/336H01L21/28H01L27/115H01L29/788H01L29/423H10B69/00
CPCH01L29/42324H01L29/513H01L29/6656H01L29/78H01L29/7881H10B41/48H10B41/40
Inventor 金东郁
Owner DONGBU HITEK CO LTD