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Semiconductor devices and fabrication methods thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of LDMOS-FET device function impact, excessive thermal budget consumption, time-consuming, etc.

Active Publication Date: 2008-08-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, forming the additional mask layer 275 is time-consuming and consumes excessive thermal budget, so that the functionality of the LDMOS-FET device is adversely affected.

Method used

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  • Semiconductor devices and fabrication methods thereof
  • Semiconductor devices and fabrication methods thereof
  • Semiconductor devices and fabrication methods thereof

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Embodiment Construction

[0033] The detailed description of each embodiment and the accompanying drawings are used as the reference basis of the present invention below. In the drawings or written descriptions, the same reference numerals are used for similar or identical parts. And in the drawings, the shape or thickness of the embodiments may be exaggerated for simplification or convenience. Moreover, the parts of each element in the drawings will be described separately. It should be noted that the elements not shown or described in the drawings are forms well known to those skilled in the art. In addition, specific embodiments only The specific methods used to reveal the present invention are not intended to limit the present invention.

[0034] The manufacturing method of the LDMOS-FET device disclosed in the embodiment of the present invention is shown in FIG. 3A-FIG. 3E respectively. Two-stage photolithography and etching steps are performed to form a gate stack structure, so that on one of th...

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device described above includes a semiconductor substrate. A patterned gate structure is disposed on the semiconductor substrate. The single-side spacer is disposed on the first sidewall of the gate structure. A body-doped region of the first type is formed in the semiconductor substrate and adjacent to the second sidewall of the gate structure. A second-type source doped region is formed on the body doped region and has edges aligned with the second sidewall of the gate structure. The second-type drain doped region is formed in the semiconductor substrate, and has side ends aligned with the outer surface of the single-side spacer. The invention can fully protect the gate stack structure from being damaged by the forward ion implantation part, so a stable threshold voltage value can be obtained, and the process window of the forward ion implantation part will not be narrowed, and it can be fully compatible with the advanced high voltage Integrate with high power component process technology.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a double-diffused metal oxide semiconductor field effect transistor (LDMOS-FET) device and a manufacturing method thereof. Background technique [0002] High-voltage component technology is suitable for high-voltage and high-power integrated circuits. One type of conventional high-voltage semiconductor device is a double-diffused-drain (DDD) CMOS structure, and the other type is a laterally diffused MOS (LDMOS) structure. Traditional high-voltage semiconductor components are mainly used in component applications higher than or roughly 18V. The advantage of high-voltage component technology is that it is cost-effective and easily compatible with other processes. It has been widely used in display driver IC components, power supplies, power management, communications, automotive electronics or industrial control and other fields. [0003] FIG. 1 is a sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L21/336H01L21/28
CPCH01L29/66689H01L21/26586H01L29/7816
Inventor 陈吉智林怡君吴国铭柳瑞兴
Owner TAIWAN SEMICON MFG CO LTD