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Power overlay structure and method for making the same

A technology of contact structures and devices, applied in the field of MEMS, which can solve problems such as inability to eliminate heat or carry switching currents

Inactive Publication Date: 2008-08-20
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Disadvantageously, bond wires add undesirable inductance to the MEMS switch circuit
Furthermore, neither wire bonding nor flip chip solutions can dissipate significant heat from the MEMS switch or carry the switching current when operating in high current applications especially in high transient current load applications

Method used

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  • Power overlay structure and method for making the same
  • Power overlay structure and method for making the same
  • Power overlay structure and method for making the same

Examples

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Embodiment Construction

[0020] Before describing in detail MEMS devices and methods related to fabricating MEMS devices according to embodiments of the present invention, it should be observed that these embodiments pertain to novel and non-obvious combinations of elements and process steps. In order not to obscure the present disclosure, which has details apparent to those skilled in the art, certain routine elements and steps are described with less detail, while the drawings and specification describe in greater detail other features relevant to understanding embodiments of the invention. components and steps. The process steps shown are schematic only, as will be apparent to those skilled in the art that certain individual steps shown below may be combined and certain steps may be divided into individual sub-steps to accommodate individual process variations.

[0021] The following examples are not intended to limit the structures or methods of the present invention, but merely to provide exempla...

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Abstract

One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).

Description

technical field [0001] Embodiments of the present invention relate generally to MEMS (microelectromechanical systems), and in particular to high current capacity MEMS devices. Background technique [0002] Semiconductor devices, such as bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), can be controlled to a substantially non-conductive state ("off," "open," or non-conductive) as well as to The state of substantially conducting electricity ("on", "closed", or conducting). These devices can be used as switches to connect and disconnect a load from a power source in response to a control signal. State-of-the-art transistor switches do not exhibit ideal switching characteristics due to off-state leakage current and on-state resistance that consume the power supplied by the power supply. [0003] MEMS (microelectromechanical systems) devices include integrated microdevices, such as mechanical components, formed on a substrate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00H01H59/00B81C3/00B81C5/00B81C99/00
CPCH01L2924/13091H01L2224/92144H01L2924/01029H01L2924/10253H01L24/24H01H9/52H01H59/0009H01L2224/73267H01L2224/32245H01L2924/1306H01L2924/1461H01L2924/1305H01L2924/12042H01L2924/14Y10T29/49105H01L2224/32225H01L2224/04105H01L2924/00B81B7/02
Inventor S·D·阿瑟A·埃拉塞尔J·I·赖特K·苏布拉马尼安C·F·凯梅尔A·V·高达
Owner GENERAL ELECTRIC CO