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Rapid response infrared detector and method for making same

A fast-response, infrared light technology, applied in the field of photodetectors, which can solve problems such as slow response time

Inactive Publication Date: 2010-07-21
CHINA UNIV OF PETROLEUM (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, various types of laser detectors such as pyroelectric, photoelectric, and pyroelectric have been developed in the prior art, among which pyroelectric detectors are most commonly used. However, although pyroelectric detectors have a wide response range, their response time is relatively slow. It is millisecond level, so people are still exploring new laser detectors with fast response and high sensitivity

Method used

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  • Rapid response infrared detector and method for making same
  • Rapid response infrared detector and method for making same
  • Rapid response infrared detector and method for making same

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Please refer to figure 1 , Prepare one based on Al 2 O 3 Single crystal or Al 2 O 3 The preparation method of the film infrared light detector includes the following steps:

[0027] 1. First of all, the pulsed laser film forming process is adopted, and the aluminum alloy is 5mm×10mm×0.5mm. 2 O 3 Single crystal or Al 2 O 3 The film is divided into a silver film with a thickness of 1nm and an area of ​​5mm×1mm on both sides using a mask method;

[0028] 2. Take the samples made above and follow figure 1 The structure shown is made, the first electrode 2 and the second electrode 3 are vapor-deposited on 1, respectively, the first electrode lead 4 and the second electrode lead 5 are welded on the first electrode 2 and the second electrode 3, and the A resistor 6 of 1 MΩ is connected in parallel between the first electrode lead 4 and the second electrode lead 5, and the output ends of the two electrode leads can be connected to a voltage measuring device 7. This embodiment uses an...

Embodiment 2

[0031] Please refer to figure 1 , Prepare one based on Al 2 O 3 Single crystal or Al 2 O 3 The preparation method of the film infrared light detector includes the following steps:

[0032] 1. First of all, using magnetron sputtering film production process, in 5mm × 10mm × 0.5mm Al 2 O 3 On the single crystal, an aluminum film with an area of ​​5mm×1mm and a thickness of 10μm is deposited on both sides by a mask method;

[0033] 2. Take the samples made above and follow figure 1 As shown in the structure, the first electrode lead 4 and the second electrode lead 5 are welded to the first electrode 2 and the second electrode 3 respectively, and 1MΩ is connected in parallel between the first electrode lead 4 and the second electrode lead 5 The resistance 6, the output ends of the two electrode leads can be connected to a voltage measuring device 7. This embodiment uses an amplifier circuit or an oscilloscope.

[0034] The prepared detector probe is irradiated by 808nm infrared laser, an...

Embodiment 3

[0036] Please refer to figure 1 , Prepare one based on Al 2 O 3 Single crystal or Al 2 O 3 The preparation method of the film infrared light detector includes the following steps:

[0037] Will Al 2 O 3 Single crystal or Al 2 O 3 The film is made like figure 1 The detector shown outputs a photovoltaic signal under the irradiation of a 980nm infrared laser.

[0038] 1. First of all, using a conventional spot welding machine, in the 5mm × 10mm thickness of 1nm Al 2 O 3 An indium electrode with an area of ​​1mm2 and a thickness of 1μm is welded on the film;

[0039] 2. Take the samples made above and follow figure 1 The structure shown is made, the first electrode lead 4 and the second electrode lead 5 are welded to the first electrode 2 and the second electrode 3 respectively, and 0.1Ω is connected in parallel between the first electrode lead 4 and the second electrode lead 5 The output ends of the two electrode leads can be connected to the voltage measuring device 7. In this embodime...

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Abstract

The invention provides a fast response infrared detector and a preparation method thereof. The infrared detector comprises a light response layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein, the light response layer is an Al2O3 mono-crystalline or Al2O3 film with the thickness of 1nm to 10mm; the first electrode and the second electrode are arranged on the light response layer with the thickness of 1nm to 10 mm; ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are connected with an amplification circuit or voltage testing equipment; furthermore, a resistor is fixedly connected between the two electrode leads in parallel. The infrared detector of the invention has simple structure and high response speed, and can obtain photovoltaic signals under the radiation of infrared, with the response speed of ns level.

Description

Technical field [0001] The invention relates to a photodetector, in particular to a fast-response infrared photodetector made of aluminum oxide single crystal material or thin film. Background technique [0002] The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and basic research, but also has a very wide range of applications in military, national defense, agriculture, resource extraction, and transportation. At present, various types of laser detectors such as pyroelectric, photoelectric, and pyroelectric have been developed in the prior art. Among them, the pyroelectric detector is the most commonly used. However, although the pyroelectric detector has a wide response range, the response time is relatively slow. It is milliseconds, so people are still exploring new laser detectors with fast response and high sensitivity. [0003] Sapphire single crystal (Sapphire, also known as white sapphire, molecular formula is Al 2 O...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01J11/00
Inventor 周娜赵嵩卿刘昊赵卉高磊王爱军赵昆
Owner CHINA UNIV OF PETROLEUM (BEIJING)
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