Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films

Abstract

The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 60 / 861,327, filed November 28, 2006. The disclosure of this provisional application is incorporated herein by reference. Background technique [0003] Silicon oxide films are used for a variety of applications in the fabrication of transistor structures for integrated circuits. These applications include use as hardmasks for ion implantation, etch stops to control contact hole etching, sidewall partition films along gates, protective films to shield adjacent species from etching or cleaning processes, Environmental barriers, and dielectric substances to reduce external fringe capacitance. To address these many demands, tailoring the chemical and physical properties of these membranes is necessary. [0004] Lower temperature methods for the preparation of silicon oxide and silicon nitride have been developed using chemical precursors such as hexachlo...

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Problems solved by technology

Although the application suggests the feasibility of these precursors, it does not provide experimental data to support that films can be prepared from these precursors in a manner that addresses the cost-of-ownership that needs to be exploited in the manufacture of integrated circuits

Additionally, there may be issues related to safe handling and substance use

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