Test base, test base mask and forming method of test base

A technology of mask patterns and substrates, which is applied in the field of integrated circuit manufacturing, can solve problems such as different degrees of unevenness in grinding, differences in grinding, and the inability to detect the influence of peripheral pattern density on grinding uniformity, so as to achieve the effect of improving authenticity

A technology of mask patterns and substrates, which is applied in the field of integrated circuit manufacturing, can solve problems such as different degrees of unevenness in grinding, differences in grinding, and the inability to detect the influence of peripheral pattern density on grinding uniformity, so as to achieve the effect of improving authenticity

CN101290923AInactive Publication Date: 2008-10-22SEMICON MFG INT (SHANGHAI) CORP +1

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Test base, test base mask and forming method of test base
  • Test base, test base mask and forming method of test base
  • Test base, test base mask and forming method of test base

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0038] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a test substrate, which comprises at least one set of test units which are used for replacing products to detect the manufacturing effect, wherein, each test unit comprises at least two test primitives and at least two auxiliary test primitives; the test primitives are connected with the auxiliary test primitives at intervals; and peripheral figures are arranged outside the test units and filling figures are arranged inside the peripheral figures. Moreover, the invention also provides a test substrate mask and a method for forming the test substrate. The test substrate can realize detection of the grinding uniformity affected by the density of the peripheral figures of the products and improve the authenticity of the detection.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a test base, a test base mask and a method for forming the test base. Background technique [0002] In the traditional integrated circuit manufacturing process, in order to ensure the quality of the product, inspection is required after many steps involved in the manufacturing process, such as inspection of products after grinding or etching. Usually, a test matrix is ​​fabricated on a semiconductor substrate, and then the test matrix is ​​used instead of the product for testing. In order to enable the test base to truly simulate the relevant manufacturing process of the product, the test base and the product are produced synchronously. [0003] Various attempts have been made in the industry regarding the structure of the test base and how to use the test base to perform process inspection and then complete the manufacture of semiconductor devices. The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
22 Oct 2008
Publication
CN101290923A
IPC
H01L23/544; H01L21/00; G03F1/14; G03F1/44
Inventors
胡宇慧; 邓永平