Ald reactor

A technology of reactors and reaction chambers, applied in the field of processing substrates, for example, can solve problems such as reactor surface corrosion, reaction chambers that cannot function optimally, and reduce material efficiency

Active Publication Date: 2008-11-19
青岛四方思锐智能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In all reaction chambers as described above, the aim is to improve the hydrodynamic morphology, but the result is a complex structure or an unfavorable flow distribution, in which case the reaction chamber does not function optimally
In addition, the non-functional surfaces of the reaction chamber, where no gas is fed into or out, are prone to wetting
In this context, wetting means that the surface is affected by the chemical reagents of the starting material due to the influence of the gas flow in the reaction chamber, which in turn reduces the efficiency of the processed material and causes corrosion of the reactor surface

Method used

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  • Ald reactor

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Embodiment Construction

[0011] Figures 1A and 1B show a cylindrical reaction chamber 1 of an ALD reactor according to the invention, comprising a cover plate 2 and a bottom plate 4. The cover plate 2 and the bottom plate 4 define the bottom, top and side walls of the interior portion 28 of the reaction chamber. In the embodiment shown in FIG. 1 , the cover plate 2 is an annular flange-like plate which can be placed and / or fastened tightly over the base plate 4 so as to form the inner part 28 of the reaction chamber. The side walls of the reaction chamber are provided with feed ports 30 and discharge ports 40 through which gas can be fed into and discharged from the inner part 28 of the reaction chamber. Furthermore, the base plate 4 is provided with inlets 12 and 14 along which gas can be supplied to an inlet 30 and an outlet 16 along which gas can be exhausted from the inner part 28 of the reaction chamber through an outlet 40 . There may be one or more inlets 12, 14 and outlets 16. For example, t...

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Abstract

The invention relates to a reaction chamber of an ALD reactor which comprises a bottom wall, a top wall and side walls extending between the bottom wall and the top wall which define an inner portion (28) of the reaction chamber. The reactor further comprises one or more feed openings (30) for feeding gas into the reaction chamber and one or more discharge openings (40, 50) for discharging gas fed into the reactor from the reaction chamber. The reaction chamber is characterized in that each side wall of the reaction chamber comprises one or more feed openings (30), in which case all side walls of the reaction chamber participate in gas exchange.

Description

Background technique [0001] The present invention relates to a reaction chamber of an ALD (Atomic Layer Deposition) reactor and a method for processing a substrate in a reaction chamber of an ALD reactor. More specifically, the invention relates to a reaction chamber of an ALD reactor according to the preamble of claim 1, the reaction chamber comprising a cover plate and a bottom plate, the two plates forming an inner part, a bottom wall, a top wall in the reaction chamber and a side wall extending between the bottom wall and the top wall, the reactor further comprising one or more inlet ports for feeding gas into the reaction chamber and for feeding gas into the reactor from the reaction chamber One or more outlets for discharge. [0002] The reaction chamber is the main part of the ALD reactor where the substrate to be processed is placed. ALD processing is based on sequential saturated surface reactions in which the surface controls film growth. During processing, each r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/00C23C16/44C30B25/00C30B25/04C23C
CPCC23C16/45525C23C16/45544C30B25/14C23C16/00C23C16/44C30B25/00
Inventor P·索伊尼宁L·凯托
Owner 青岛四方思锐智能技术有限公司
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