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Dual-electrode electrostatic chuck

An electrostatic chuck and two-electrode technology, which is applied to circuits, electrical components, ion implantation and plating, etc., can solve the problems of the uniformity of the electrostatic chuck's adsorption force, and the electrodes cannot be completely symmetrically distributed, so as to achieve a uniform adsorption force. Effect

Active Publication Date: 2010-11-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The above-mentioned prior art has at least the following disadvantages: since it is necessary to connect multiple ring electrodes into two DC electrodes, it is necessary to form a connection part on the ring electrode to connect multiple ring electrodes together, so that the electrodes cannot be distributed completely symmetrically, and still It will have a certain impact on the uniformity of the electrostatic chuck's adsorption force

Method used

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  • Dual-electrode electrostatic chuck
  • Dual-electrode electrostatic chuck
  • Dual-electrode electrostatic chuck

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Embodiment Construction

[0018] The preferred embodiment of the dual-electrode electrostatic chuck of the present invention is as follows: Figure 4 , Figure 5 As shown, the insulating layer 4 is included, and the insulating layer 4 is provided with a first DC electrode 1 and a second DC electrode 2, and the first DC electrode 1 and the second DC electrode 2 respectively include a plurality of ring conductors, and the two DC electrodes The plurality of ring conductors 1 and 2 are distributed at intervals, and connecting devices are respectively provided under the first DC electrode 1 and the second DC electrode 2, and the plurality of ring conductors of the first DC electrode 1 and the second DC electrode 2 The conductors are respectively connected via corresponding connecting devices. The ring conductors of the first DC electrode 1 and the second DC electrode 2 can form a completely symmetrical ring structure.

[0019] Such as Image 6 , Figure 7 As shown, the connecting device includes connect...

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Abstract

The invention discloses a two-electrode electrostatic chuck comprising an insulated layer, in which a first direct-current electrode and a second direct-current electrode are arranged and respectively include a plurality of ring-shaped conductors. The ring-shaped conductors are distributed at mutual intervals; and a connecting device is respectively arranged below the conductors, which are connected respectively through a corresponding connecting device. The connecting device comprises a connecting plate, on which a plurality of conduction poles are connected, with each conduction pole being connected with a ring-shaped conductor. The ring-shaped conductors of the first direct-current electrode and the second direct-current electrode are caused to form completely symmetric ring-shaped structure, thus electrostatic absorption force of uniform distribution is fulfilled between the electrostatic chuck and a wafer.

Description

technical field [0001] The invention relates to a semiconductor processing equipment component, in particular to a double-electrode electrostatic chuck. Background technique [0002] In semiconductor wafer processing equipment, electrostatic chucks are used to support and adsorb wafers within process chambers or transport equipment during semiconductor processing or during wafer transfer. A two-electrode electrostatic chuck is one type of electrostatic chuck commonly used in the semiconductor industry. [0003] Such as figure 1 As shown, the first DC electrode 1 and the second DC electrode 2 of the dual-electrode electrostatic chuck are powered by a DC power supply, wherein the first DC electrode 1 is positive and the second DC electrode 2 is negative. Accordingly, corresponding negative and positive charges are induced on the wafer placed thereon, and the electrostatic attraction between the induced charges and the charges on the DC electrodes 1 and 2 attracts the wafer t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683C23C14/50C23C16/458B23Q3/08
Inventor 刘利坚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD