Unlock instant, AI-driven research and patent intelligence for your innovation.

Light-emitting diode and fabrication method thereof

A technology of light-emitting diodes and light-emitting layers, which is applied in semiconductor devices, electrical components, circuits, etc., and can solve the problems that the state of the side and the arrangement of electrodes have not been optimized, and the shape of the device is complicated.

Inactive Publication Date: 2012-06-13
RESONAC HOLDINGS CORPORATION
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device shape of the structure in which two electrodes are formed on the surface opposite to the light extraction surface is complicated, and has not been optimized in terms of the state of the sides and the arrangement of the electrodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting diode and fabrication method thereof
  • Light-emitting diode and fabrication method thereof
  • Light-emitting diode and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0075] figure 1 with figure 2 Illustrated the semiconductor light-emitting diode manufactured in this example; figure 1 Show the floor plan, and figure 2 Shows passing along line II-II figure 1 And the cross-sectional view taken. image 3 It is a cross-sectional view of the laminated structure of the semiconductor epitaxial wafer used in the semiconductor light emitting diode.

[0076] The semiconductor light emitting diode 10 manufactured in this example is a red light emitting diode (LED) provided with an AlGaInP light emitting portion 12.

[0077] In this example, the present invention will be specifically described with reference to a case where a light emitting diode is manufactured by bonding an epitaxial laminated structure (epitaxial wafer) provided on the GaAs substrate 11 to the GaP substrate 135.

[0078] The LED 10 is manufactured using an epitaxial wafer provided with a semiconductor layer 13, which is sequentially laminated on a semiconductor substrate 11 composed of S...

example 2

[0094] Figure 7 Is a plan view showing the second embodiment of the light emitting diode contemplated by the present invention, and Figure 8 Is passing along the line VIII-VIII Figure 7 And the cross-sectional view taken.

[0095] Manufactured under the same conditions as in Example 1 Figure 7 with Figure 8 LEDs shown in.

[0096] When current passes between the n-type and p-type ohmic electrodes 15 and 16 via the n-electrode terminal and the p-electrode terminal provided on the first surface of the mounting substrate, the lamp emits red light having a dominant wavelength of 620 nm. The forward voltage (Vf) generated during the passage of the 20mA current in the forward direction reaches approximately 2.10V. This shows the fact that the correct setting of the electrodes and the good ohmic characteristics exhibited by each of the ohmic electrodes 15 and 16 are reflected. It was found that the intensity of the emitted light when the forward current was set to 20 mA produced a h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A light-emitting diode (10) has a light-extracting surface and includes a transparent substrate (14), a compound semiconductor layer (13) bonded to the transparent substrate, a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part and formed of (AlXGa1-X)YIn1-YP (0 <=X<=l, 0 < Y<=1), a first electrode (15) and a second electrode (16) of different polarities provided on a surface of the light-emitting diode opposite the light-extracting surface, and a reflecting metal film (17) formed on the first electrode. The transparent substrate has a first side face (142) virtually perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143)oblique to the light-emitting surface on a side distant from the light-emitting layer. The first and second electrodes are mounted respectively on electrode terminals (43, 44).

Description

[0001] Cross references to related applications [0002] This application is based on an application filed under 35 USC§111(a). According to 35 USC§119(e)(1), provisional application No. 60 filed on February 16, 2006 under 35 USC§111(b) is required. / 773,677 and No. 60 / 773,678 filed on February 16, 2006 and Japanese Patent Application No. 2006-030475 filed on February 8, 2006 and No. 2006-032028 filed on February 9, 2006 Priority. Technical field [0003] The present invention relates to a light-emitting diode having a semiconductor layer and a method of manufacturing the same, the semiconductor layer comprising aluminum gallium indium phosphide ((Al X Ga 1-X ) Y In 1-Y P, where 0≦X≦1 and 0<Y≦1) form a light emitting layer, and the semiconductor layer is bonded to a transparent substrate. Background technique [0004] As a light emitting diode (LED) capable of emitting visible light of red, orange, yellow, or yellow-green, it has hitherto been known to have aluminum gallium indi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/28H01L33/38H01L33/06H01L33/16H01L33/30
Inventor 有满正男
Owner RESONAC HOLDINGS CORPORATION