Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electrostatic clamping disc controlling temperature by air and method for controlling temperature of substrate

An electrostatic chuck and gas temperature technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large energy loss and slow temperature control speed, and achieve the effect of small energy loss and fast temperature control speed

Active Publication Date: 2009-05-06
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The above prior art has at least the following disadvantages: slow temperature control speed, large energy loss during heat conduction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic clamping disc controlling temperature by air and method for controlling temperature of substrate
  • Electrostatic clamping disc controlling temperature by air and method for controlling temperature of substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The gas temperature-controlled electrostatic chuck of the present invention, its preferred embodiment is as follows figure 2 As shown, the electrostatic chuck 2 is provided with a plurality of through holes 3, 4 communicating up and down, the lower end of at least one of the plurality of through holes 3, 4 is connected with an air supply channel 9; the lower end of at least one through hole Connected with return air channel 10. During the process, gas at a required temperature can be introduced through the gas supply channel 9 and flow back through the return gas channel 10 to form a circulation between the electrostatic chuck 2 and the substrate 1 to directly control the temperature of the substrate 1 . The temperature control speed is fast and the energy loss is small.

[0014] The gas supply channel 9 can be connected with a gas temperature control device 5, and the gas temperature control device 5 controls the temperature of the gas to make the gas reach a require...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electrostatic holding chuck with gaseous temperature control and a method for controlling substrate temperature; the electrostatic holding chuck is provided with a plurality of through holes which are communicated up and down, and the lower end of at least one of the through holes is connected with a gas supply channel; the lower end of one through hole is connected with a gas return channel; and the gas supply channel is connected with a gas temperature controlling device. In the technological process, gas with required temperature can be led through the gas supply channel and reflows from the gas return channel, and the circulation is formed between the electrostatic holding chuck and the substrate so as to directly control the temperature of the substrate, and the temperature controlling speed is fast, and the energy loss is less.

Description

technical field [0001] The invention relates to a component of a semiconductor processing device, in particular to an electrostatic chuck and a method for controlling the temperature of a substrate. Background technique [0002] In the process of large-scale integrated circuits in the semiconductor industry, it is necessary to process fine-scale graphics on the surface of the substrate. In different processing techniques, the required process temperature is also different. [0003] An electrostatic chuck is set under the substrate in the reaction chamber of semiconductor processing. The electrostatic chuck supports the substrate, and then a certain pressure of gas (such as helium) is introduced to keep a certain distance between the substrate and the chuck to avoid friction and damage. Increase heat transfer. Another function of the electrostatic chuck is to control the temperature of the substrate to keep the substrate at the required process temperature. [0004] like ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
Inventor 王娜
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com