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Light-sensitive compound and photoresist composition comprising the same

一种光敏化合物、光致抗蚀剂的技术，应用在有机化合物的制备、化学仪器和方法、用于光机械设备的光敏材料等方向

Inactive Publication Date: 2009-05-20
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, since the structure of semiconductors becomes microstructures of 65nm and below, resists with polymer as the main component cannot provide uniformity to micropatterns

Method used

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  • Light-sensitive compound and photoresist composition comprising the same
  • Light-sensitive compound and photoresist composition comprising the same
  • Light-sensitive compound and photoresist composition comprising the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1 to 1-7

[0042] [Example 1-1 to 1-7] Preparation of photosensitive compounds shown in general formula 2a to 2g

[0043] A. Preparation of Compounds 1-1 to 1-7

[0044] As shown in Reaction 1 below and Table 1, polypropylene glycol (where n is isopropyl oxide (-CH(CH 3 )CH 2 O-) monomer repeats) and tosyl chloride were dissolved in dichloromethane and reacted with pyridine (6.27ml, 77.6mmol) added at room temperature for 12 hours. After the reaction was completed, the reaction solution was washed with water, extracted and separated with dichloromethane, and then filtered through anhydrous magnesium sulfate. After dichloromethane was evaporated from the remaining solution by using a vacuum distiller, colorless liquid compounds 1-1 to 1-7 were obtained by column chromatography using silica gel. Its yields are listed in Table 1.

[0045] 【Reaction 1】

[0046]

[0047] (wherein, ts is a tosyl group)

[0048] 【Table 1】

[0049]

isopropyl oxide monomer

The numbe...

Embodiment 2-1 to 2-7

[0074] [Examples 2-1 to 2-7] Preparation of Photoresist Composition and Formation of Photoresist Pattern Using the Photoresist Composition

[0075] 2.0 g of each molecule of resist photosensitive compound (compound of formula 2a~2g) synthesized in Examples 1-1 to 1-7, 0.08 g of triphenylsulfonium trifluoromethanesulfonate as photoacid generator Acid salt, 0.02 g of triethanolamine as a reaction inhibitor, and 20 g of propylene glycol monomethyl ether acetate (PGMEA) as an organic solvent were mixed and filtered to prepare a photoresist composition. The prepared photoresist composition was spin-coated on the etched layer of the silicon wafer to form a photoresist film. The photoresist film was then pre-baked at 130 °C for 90 seconds before being exposed through an ArF ASML1250 instrument with a numerical aperture of 0.85. Thereafter, the photoresist film was baked again (PEB, post-exposure bake) at 125° C. for 90 seconds. The baked wafer was dipped in 2.38 wt % trimethylammon...

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PUM

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Abstract

The invention discloses a light-sensitive compound and a photoresist combination containing the light-sensitive compound. The light-sensitive compound is taken as a molecular polymer resist, and the grain diameter is less than the common polymer used in photoresist; besides, the light-sensitive compound can forms into a nanostructured assembling system; the following general expressions can be used for expressing the light-sensitive compound. Besides, the invention provides the photoresist combination which contains 1 wt percent to 85wt (weight percentage) percent of light-sensitive compound; the photo-acid generator occupies 0.015 percent to 12 percent, and the organic solvent occupies 50 to 5000 percent in every 100 percent of light-sensitive compound. In the general expression, n is the number of the repeated monomers oxidation isopropyl (-CH (CH3) CH2O-) and is the integer from 1 to 40; R is alkyl group of 1 to 20 carbon atoms or naphthene base group of 3 to 20 carbon atoms.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2007-0116187 filed on November 14, 2007. The entire disclosure of this Korean patent application is incorporated herein by reference. field of invention [0002] The present invention relates to a photosensitive compound and a photoresist composition comprising the photosensitive compound, more particularly, the application relates to a photosensitive compound capable of forming a nanoassembly and a photoresist composition comprising the photosensitive compound, the photosensitive compound As a molecular resist, its particle size is smaller than conventional polymers used in photoresists. Background of the invention [0003] Photolithography is a method for forming circuit patterns of semiconductor chips or forming display elements from semiconductor wafers or glass for display elements. A photoresist composition is the most basic material of photolithography. Recently, since patte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/00
CPCC08G65/3326C08G65/3346C07C2103/74C07C69/94C07C2101/08C08G65/3315G03F7/0392C07C2101/14G03F7/0045C07C2601/08C07C2601/14C07C2603/74
Inventor 金政佑金德倍金宰贤
Owner DONGJIN SEMICHEM CO LTD