Light-emitting device and manufacturing method thereof
A technology of light-emitting device and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc.
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[0022] Please refer to FIG. 3 , which shows a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. A light-emitting device 1, such as a light-emitting diode (LED), includes a first light-transmitting substrate 10 with a patterned upper surface, and the upper surface includes a first protrusion 101, a second protrusion 102, and A third protrusion 103; a plurality of epitaxial units, including a first epitaxial unit 111 emitting light of a first color, a second epitaxial unit 212 emitting light of a second color, and a third epitaxial unit emitting light of a third color 313 are respectively formed on the first protruding portion 101, the second protruding portion 102, and the third protruding portion 103, wherein a bonding layer 12 is respectively included between each protruding portion and a plurality of epitaxial units; An electrode 13 and a second electrode 14 are formed on each epitaxial unit.
[0023...
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