Unlock instant, AI-driven research and patent intelligence for your innovation.

Tunable selectivity slurries in cmp applications

A mechanical polishing, selective technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as erosion

Active Publication Date: 2009-07-08
CMC MATERIALS INC
View PDF12 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a polishing composition designed to be non-selective to substrates containing metal and dielectric layers may not exhibit 1:1 selectivity during polishing of actual substrates, resulting in undesired erosion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tunable selectivity slurries in cmp applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] This example illustrates the tunable selectivity obtained by the method of the invention.

[0047] The first chemical-mechanical polishing composition contained 5% by weight of polycondensed silica (Nalco TX11005) with an average primary particle size of 25 nm, 0.0837% by weight of iron nitrate, 69 ppm malonic acid, and 1250 ppm tetrabutylammonium hydroxide ( TBAH). The first chemical-mechanical polishing composition exhibited a high removal rate for tungsten, ie, 2700 angstroms / minute. The second chemical-mechanical polishing composition contained 5% by weight of polycondensed silica (Nalco TX11005) with an average particle diameter of 25 nm and 1250 ppm of TBAH. The second chemical-mechanical polishing composition exhibited a high removal rate for oxide, ie, 1900 angstroms / minute. The first and second polishing compositions were mixed in various proportions, and 4% by weight hydrogen peroxide was added to produce 7 polishing compositions (1A, 1B, 1C, 1D, 1E, 1F, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

Description

technical field [0001] The present invention relates to methods of making chemical-mechanical polishing compositions and methods of polishing substrates using the chemical-mechanical polishing compositions. Background technique [0002] An integrated circuit is made up of millions of active devices formed on or in a substrate, such as a silicon wafer. The active devices are chemically and physically connected into the substrate and interconnected to form functional circuits using multilayer interconnects. A typical multilayer interconnect includes a first metal layer, an interlayer dielectric layer, and a second and in some cases subsequent metal layers. [0003] As layers of material are successively deposited on and removed from a substrate, it may be necessary to remove portions of the uppermost surface of the substrate. Planarizing or "polishing" a surface is a process in which material is removed from the surface of a substrate to form a generally smooth, planar surfa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
CPCC09G1/02H01L21/3212H01L21/31053C09K3/14
Inventor 陈湛罗伯特·瓦卡西本杰明·拜尔迪尼什·卡纳
Owner CMC MATERIALS INC