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Tunable selectivity slurries in cmp applications

A mechanical polishing, selective technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc.

Inactive Publication Date: 2012-12-26
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a polishing composition designed to be non-selective to substrates containing metal and dielectric layers may not exhibit 1:1 selectivity during polishing of actual substrates, resulting in undesired erosion

Method used

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  • Tunable selectivity slurries in cmp applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] This example illustrates the tunable selectivity obtained by the method of the invention.

[0050] The first chemical-mechanical polishing composition contained 5% by weight of polycondensed silica (Nalco TX11005) with an average primary particle size of 25 nm, 0.0837% by weight of iron nitrate, 69 ppm malonic acid, and 1250 ppm tetrabutylammonium hydroxide ( TBAH). The first chemical-mechanical polishing composition exhibited a high removal rate for tungsten, ie, 2700 angstroms / minute. The second chemical-mechanical polishing composition contained 5% by weight of polycondensed silica (Nalco TX11005) with an average particle diameter of 25 nm and 1250 ppm of TBAH. The second chemical-mechanical polishing composition exhibited a high removal rate for oxide, ie, 1900 angstroms / minute. The first and second polishing compositions were mixed in various proportions, and 4% by weight hydrogen peroxide was added to produce 7 polishing compositions (1A, 1B, 1C, 1D, 1E, 1F, and...

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Abstract

The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

Description

Technical field [0001] The invention involves the method of preparing chemical-mechanical polishing composition and the method of using the chemical-mechanical polishing composition. Background technique [0002] The integrated circuit is composed of millions of active devices on the substrate or in the substrate, such as silicon chip.The active device is connected to the substrate in a chemical and physical manner and forms a functional circuit by using multiple layers.A typical multi -layer interconnection contains the first metal layer, inter -layer dielectric layer, and subsequent metal layers in the second and in some cases. [0003] When the layers of each material are deposited on the substrate and removed from it, some parts of the top surface of the substrate may be removed.The surface of the surface is flat or "polishing" on the surface is a process that removes the material from the surface of the substrate to form a smooth and flat surface.Flating can help remove the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14
CPCC09G1/02H01L21/3212H01L21/31053C09K3/14
Inventor 陈湛罗伯特·瓦卡西本杰明·拜尔迪尼什·卡纳
Owner CMC MATERIALS INC