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Light emitting element and method for manufacturing the same

A technology for a light-emitting element and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of time-consuming manufacturing procedures, inability to emit, and reduced light extraction efficiency of light-emitting elements.

Active Publication Date: 2011-07-27
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the known light-emitting element is prone to reduce the stability of the light-emitting element due to the inaccurate alignment between the connection pad and the electrode and improper control of the welding conditions during the welding process, and its manufacturing process is also very time-consuming; in addition, in the known In a light-emitting device, when the light emitted by the light-emitting layer (not shown in the figure) passes through the transparent substrate, it is prone to total reflection and cannot be emitted, which further reduces the light extraction efficiency of the light-emitting device.

Method used

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  • Light emitting element and method for manufacturing the same
  • Light emitting element and method for manufacturing the same
  • Light emitting element and method for manufacturing the same

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Embodiment Construction

[0032] Figures 2A to 2K It is a schematic diagram of each step of the manufacturing process of the first embodiment of the present invention.

[0033] Such as Figure 2A and Figure 2B As shown, a growth substrate 20 is provided, and a known method, such as chemical vapor deposition (Chemical Vapor Deposition, CVD), is used to grow an epitaxial thin film structure 22 on the growth substrate 20; wherein this epitaxial thin film structure 22 is from bottom to top, The sequence is the first conductive type semiconductor layer 222 , the light emitting layer 226 , and the second conductive type semiconductor layer 224 .

[0034] Subsequently, if Figure 2C and Figure 2D As shown, a connection layer 24 is coated on the epitaxial thin film structure 22, and the temporary substrate 26 is connected to the epitaxial thin film structure 22 through the connection layer 24; wherein, the connection layer 24 is a material with adhesive properties, such as polyimide (PI), benzocyclobut...

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Abstract

The invention discloses a light-emitting element. An epitaxial film structure is fixed on a carrier by anisotropic conductive adhesive (ACA) and an electrode on the epitaxial film structure is electrically connected with the carrier by virtue of the characteristics of the ACA. The invention also discloses a method for manufacturing the light-emitting element, comprising the steps of providing a temporary substrate, forming the epitaxial film structure on the temporary substrate, providing ACA and carrier, connecting the carrier with the epitaxial film structure via the ACA and removing the temporary substrate. The invention also discloses a photoelectric display element.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting element in which an epitaxial thin film structure is fixed on a carrier through an anisotropic conductive glue and a manufacturing method thereof. Background technique [0002] The light-emitting diode (light emitting diode, LED) uses the energy difference between n-type semiconductors and p-type semiconductors to release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. , so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market places high expectations on light-emitting diodes and regards them as a new generation of lighting tools. [0003] Such as figure 1 As shown, the known light-emitting diode light-emitting element 100 is formed by fixing a flip-chi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L23/488H01L21/50H01L21/60
CPCH01L2224/83192H01L2924/07811H01L2224/16225H01L2224/73204H01L2224/32225H01L24/17H01L2224/17H01L2924/12041H01L2924/15788H01L2924/00H01L2924/00012
Inventor 谢明勋
Owner EPISTAR CORP